DataSheet26.com

BC817-16LT1 PDF даташит

Спецификация BC817-16LT1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «General Purpose Transistors(NPN Silicon)».

Детали детали

Номер произв BC817-16LT1
Описание General Purpose Transistors(NPN Silicon)
Производители ON Semiconductor
логотип ON Semiconductor логотип 

4 Pages
scroll

No Preview Available !

BC817-16LT1 Даташит, Описание, Даташиты
BC817−16LT1,
BC817−25LT1, BC817−40LT1
General Purpose
Transistors
NPN Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
VCEO
45
V
Collector −Base Voltage
VCBO
50
V
Emitter −Base Voltage
VEBO
5.0
V
Collector Current − Continuous
IC 500 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board, (Note 1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xxD
xx = Specific Device Code
D = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 6
1
Publication Order Number:
BC817−16LT/D









No Preview Available !

BC817-16LT1 Даташит, Описание, Даташиты
BC817−16LT1, BC817−25LT1, BC817−40LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
45
V
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)CES
50
V
V(BR)EBO
5.0
V
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ICBO
− − 100 nA
− − 5.0 mA
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
BC817−25
BC817−40
(IC = 500 mA, VCE = 1.0 V)
BC817−16
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
hFE
100 − 250
160 − 400
250 − 600
40 −
VCE(sat)
− 0.7 V
Base −Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V)
VBE(on)
− 1.2 V
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT 100 − − MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo − 10 − pF
ORDERING INFORMATION
Device
Specific Marking Code
Package
Shipping
BC817−16LT1
BC817−16LT1G
6A SOT−23
6A SOT−23
(Pb−Free)
3,000 / Tape & Reel
BC817−16LT3
6A SOT−23
10,000 / Tape & Reel
BC817−25LT1
BC817−25LT1G
6B SOT−23
6B SOT−23
(Pb−Free)
3,000 / Tape & Reel
BC817−25LT3
BC817−25LT3G
6B SOT−23
6B SOT−23
(Pb−Free)
10,000 / Tape & Reel
BC817−40LT1
BC817−40LT1G
6C SOT−23
6C SOT−23
(Pb−Free)
3,000 / Tape & Reel
BC817−40LT3
BC817−40LT3G
6C SOT−23
6C SOT−23
(Pb−Free)
10,000 / Tape & Reel
SBC817−40LT1
6C SOT−23
3,000 / Tape & Reel
SBC817−40LT3
6C SOT−23
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
http://onsemi.com
2









No Preview Available !

BC817-16LT1 Даташит, Описание, Даташиты
BC817−16LT1, BC817−25LT1, BC817−40LT1
1000
VCE = 1 V
TJ = 25°C
100
10
0.1
1.0 10 100
IC, COLLECTOR CURRENT (mA)
1000
Figure 1. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
0.4 IC = 10 mA 100 mA 300 mA
500 mA
0.2
0
0.01
0.1 1 10
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
100
1.0
TA = 25°C
0.8
0.6
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
+1
qVC for VCE(sat)
0
−1
100
10
−2 qVB for VBE
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
1
0.1
Cib
Cob
1 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
100
http://onsemi.com
3










Скачать PDF:

[ BC817-16LT1.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BC817-16LT1General Purpose Transistors(NPN Silicon)ON Semiconductor
ON Semiconductor
BC817-16LT1General Purpose Transistors(NPN Silicon)Leshan Radio Company
Leshan Radio Company
BC817-16LT1CASE 318-08/ STYLE 6 SOT-23 (TO-236AB)Motorola  Inc
Motorola Inc

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск