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Datasheet BC817-16 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BC817-16 | SMD General Purpose Transistor SMD General Purpose Transistor (NPN)
BC817-16/BC817-25/BC817-40
SMD General Purpose Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications
• RoHS compliance
Mechanical Data
Case: Terminals:
Weight:
SOT-23, Plastic Package Solderable per | TAITRON | transistor |
2 | BC817-16 | SILICON NPN TRANSISTORS BC817 SERIES BC818 SERIES
SURFACE MOUNT SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier appli | Central Semiconductor | transistor |
3 | BC817-16 | Silicon NPN transistor BC817
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
IC 大,与 BC807 互补。 High IC ,complementary pair with BC807.
用途 / Applications
用于一般功率放大及开� | BLUE ROCKET ELECTRONICS | transistor |
4 | BC817-16 | NPN Silicon Epitaxial Planar Transistors BC817
NPN Silicon Epitaxial Planar Transistors
For switching, AF driver and amplifier applications
These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the PNP transistors BC807 and BC808 are recommended.
1.Base 2.Emitter 3.C | Kingtronics | transistor |
5 | BC817-16 | NPN GENERAL PURPOSE AMPLIFIER UNISONIC TECHNOLOGIES CO., LTD
BC817
NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
Description
The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.
3
1 2
SOT-23
*Pb-free plating product number:BC817L
PIN CONF | Unisonic Technologies | amplifier |
BC8 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BC807 | Silicon PNP transistor BC807
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
IC 大,与 BC817 互补。 High IC ,complementary pair with BC817.
用途 / Applications 用于一般功率放大及开关 FOSHAN BLUE ROCKET transistor | | |
2 | BC807 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Complementary to BC817.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
-50 -45
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -800
KEC transistor | | |
3 | BC807 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC807 BC808
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistor
Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E BC808–25 = 5F BC CDIL transistor | | |
4 | BC807 | PNP Silicon Epitaxial Planar Transistors BC807 / BC808
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier applications
These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended.
SOT-23 Plastic SEMTECH transistor | | |
5 | BC807 | PNP general purpose transistor BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistors.
Table 1. Product overview
Type number
Package
NXP
BC807
SOT23
BC807W
SOT323
BC327[1]
SOT54 (TO- NXP Semiconductors transistor | | |
6 | BC807 | PNP SURFACE MOUNT TRANSISTOR TRSYS transistor | | |
7 | BC807 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ
BC807
E
C B
COMPLEMENTARY TYPE
BC817 SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak P Zetex Semiconductors transistor | |
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