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BD135 PDF даташит

Спецификация BD135 изготовлена ​​​​«Motorola Inc» и имеет функцию, называемую «Plastic Medium Power Silicon NPN Transistor».

Детали детали

Номер произв BD135
Описание Plastic Medium Power Silicon NPN Transistor
Производители Motorola Inc
логотип Motorola  Inc логотип 

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BD135 Даташит, Описание, Даташиты
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Plastic Medium Power Silicon
NPN Transistor
. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi
complementary circuits.
DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc
BD 135, 137, 139 are complementary with BD 136, 138, 140
Order this document
by BD135/D
BD135
BD137
BD139
1.5 AMPERE
POWER TRANSISTORS
NPN SILICON
45, 60, 80 VOLTS
10 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMTÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎHCCECBTTOTTAoohhEmaooopXDDTttÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎeeslllaaeRellilIeeeeteerrllrMtmmmMarrccecDDCaattttrpaaUÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎoooieeAtt–uneeellrrrvvMBrgRR––LriirCaaaccaEBeeeabbteeusRCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎnumassnooertiirDDsAHdrssvvieeteVttiieeTtASssaaneoRÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVssInnt22trRlNoatoiicc55ppVarnlAGee__taaagoagÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ,,CCttgCelSgiietJJooeaeTuunngJnnEeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@@uccRCnttRiichooITTStannaÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎACiotTrtitna=ono=IcCg2ACÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2tSe5m5ar__sibCsCeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎietinctÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSTVVVJyCCEPP,mIICBTBEBDDÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎbsOOOtoglÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSyθθmJJÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCAbolÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBBBBBBTDDDDDDyÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎp111111333333e579579ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ51150aV011011xt10a146846o.2500ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ..l205005055u.00+55TeO1C5ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΖA022S5ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEA7A7ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΖT0Y8PmmÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎW__EWUUVVVAAWWCC_anndddddCa////tWWiiccccc__ÎÎÎÎÎÎÎÎÎtÎÎÎÎÎÎÎÎÎÎÎÎÎttttsCC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1









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BD135 Даташит, Описание, Даташиты
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBD135 BD137 BD139
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.03 Adc, IB = 0)
Symbol
BVCEO*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TC = 125_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.005 A, VCE = 2 V)
(IC = 0.15 A, VCE = 2 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.5 A VCE = 2 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.5 Adc, IB = 0.05 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.5 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎx x*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
ICBO
IEBO
hFE*
VCE(sat)*
VBE(on)*
Type
BD 135
BD 137
BD 139
Min
45
60
80
25
40
25
Max UnIt
Vdc
µAdc
0.1
10
10 µAdc
250
0.5 Vdc
1 Vdc
10.0
5.0
2.0 5 ms
1.0
0.5 TJ = 125°C
0.5 ms
dc
0.1 ms
0.1
0.05
0.02
0.01
1
BD135
BD137
BD139
2
5 10 20
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
80
Figure 1. Active–Region Safe Operating Area
2 Motorola Bipolar Power Transistor Device Data









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BD135 Даташит, Описание, Даташиты
PACKAGE DIMENSIONS
BD135 BD137 BD139
–B–
U
F
QM
–A–
123
H
K
C
VJ
GR
S 0.25 (0.010) M A M B M
D 2 PL
0.25 (0.010) M A M B M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.425 0.435
B 0.295 0.305
C 0.095 0.105
D 0.020 0.026
F 0.115 0.130
G 0.094 BSC
H 0.050 0.095
J 0.015 0.025
K 0.575 0.655
M 5_ TYP
Q 0.148 0.158
R 0.045 0.055
S 0.025 0.035
U 0.145 0.155
V 0.040 –––
MILLIMETERS
MIN MAX
10.80 11.04
7.50 7.74
2.42 2.66
0.51 0.66
2.93 3.30
2.39 BSC
1.27 2.41
0.39 0.63
14.61 16.63
5_ TYP
3.76 4.01
1.15 1.39
0.64 0.88
3.69 3.93
1.02 –––
STYLE 1:
PIN 1.
2.
3.
EMITTER
COLLECTOR
BASE
CASE 77–08
TO–225AA TYPE
ISSUE V
Motorola Bipolar Power Transistor Device Data
3










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