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PDF BF998 Data sheet ( Hoja de datos )
| Número de pieza | BF998 | |
| Descripción | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Silicon N Channel MOSFET Tetrode
Features
q Short-channel transistor
with high S/C quality factor
q For low-noise, gain-controlled
input stages up to 1 GHz
BF 998
Type
BF 998
Marking
MO
Ordering Code
(tape and reel)
Q62702-F1129
Pin Configuration
1 2 34
S D G2 G1
Package1)
SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate 1/gate 2 peak source current
Total power dissipation, TS < 76 ˚C
Storage temperature range
Channel temperature
Symbol
VDS
ID
± IG1/2SM
Ptot
Tstg
Tch
Values
Unit
12 V
30 mA
10
200 mW
– 55 … + 150 ˚C
150
Thermal Resistance
Junction - soldering point
Rth JS
< 370
K/W
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
1 page  
BF 998
Gate 1 forward transconductance
gfs1 = f (ID)
VDS = 8 V, IDSS = 10 mA, f = 1 kHz
Gate 1 input capacitance Cg1ss = f (VG1S)
VG2S = 4 V, VDS = 8 V, IDSS = 10 mA,
f = 1 MHz
Gate 2 input capacitance Cg2ss = f (VG2S)
VG1S = 0 V, VDS = 8 V
IDSS = 10 mA, f = 1 MHz
Output capacitance Cdss = f (VDS)
VG1S = 0 V, VG2S = 4 V
IDSS = 10 mA, f = 1 MHz
Semiconductor Group
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BF998.PDF ] | |
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