BF1204 PDF даташит
Спецификация BF1204 изготовлена «NXP Semiconductors» и имеет функцию, называемую «Dual N-channel dual gate MOS-FET». |
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Детали детали
Номер произв | BF1204 |
Описание | Dual N-channel dual gate MOS-FET |
Производители | NXP Semiconductors |
логотип |
12 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1204
Dual N-channel dual gate
MOS-FET
Product specification
Supersedes data of 2000 Nov 13
2001 Apr 25
No Preview Available ! |
Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1204
FEATURES
• Two low noise gain controlled amplifiers in a single
package
• Superior cross-modulation performance during AGC
• High forward transfer admittance
• High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
• Gain controlled low noise amplifiers for VHF and UHF
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment.
PINNING - SOT363
PIN DESCRIPTION
1 gate 1 (a)
2 gate 2
3 gate 1 (b)
4 drain (b)
5 source
6 drain (a)
handbook, h6alfpag5e
4
d (a) s d (b)
DESCRIPTION
The BF1204 is a combination of two equal dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor has a
SOT363 micro-miniature plastic package.
AMP
a
AMP
b
12
Top view
3
g1 (a) g2 g1 (b)
MBL252
Marking code: L3-
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per MOS-FET; unless otherwise specified
VDS
ID
Ptot
yfs
Cig1-s
Crss
NF
Xmod
Tj
drain-source voltage
− − 10 V
drain current (DC)
− − 30 mA
total power dissipation
Ts ≤ 102 °C; note 1
− − 200 mW
forward transfer admittance
ID = 12 mA; f = 1 MHz
25 30 40 mS
input capacitance at gate 1
ID = 12 mA; f = 1 MHz
− 1.7 2.2 pF
reverse transfer capacitance
f = 1 MHz
− 15 − fF
noise figure
f = 800 MHz
− 1.1 1.8 dB
cross-modulation
input level for k = 1% at 40 dB AGC 100 105 −
dBµV
operating junction temperature
− − 150 °C
Note
1. Ts is the temperature at the soldering point of the source lead.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Apr 25
2
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Philips Semiconductors
Dual N-channel dual gate MOS-FET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per MOS-FET; unless otherwise specified
VDS drain-source voltage
ID drain current (DC)
IG1 gate 1 current
IG2 gate 2 current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Ts ≤ 102 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
Product specification
BF1204
MIN.
MAX.
UNIT
− 10 V
− 30 mA
− ±10 mA
− ±10 mA
− 200 mW
−65
+150
°C
− 150 °C
VALUE
240
UNIT
K/W
250
handboPotko,thalfpage
(mW)
200
150
100
50
0
0 50
MGS359
100 150 200
Ts (°C)
Fig.2 Power derating curve.
2001 Apr 25
3
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