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PDF BF1203 Data sheet ( Hoja de datos )
| Número de pieza | BF1203 | |
| Descripción | Dual N-channel dual gate MOS-FET | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1203
Dual N-channel dual gate
MOS-FET
Product specification
Supersedes data of 2000 Dec 04
2001 Apr 25
1 page  
Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1203
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 °C
input capacitance at gate 1 f = 1 MHz
input capacitance at gate 2 f = 1 MHz
output capacitance
f = 1 MHz
reverse transfer capacitance f = 1 MHz
noise figure
power gain
cross-modulation
f = 10.7 MHz; GS = 20 mS; BS = 0
f = 400 MHz; YS = YS opt
f = 800 MHz; YS = YS opt
f = 200 MHz; GS = 2 mS; BS = BS opt;
GL = 0.5 mS; BL = BL opt; note 1
f = 400 MHz; GS = 2 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
f = 800 MHz; GS = 3.3 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 2
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
23
−
−
−
−
−
−
−
−
−
−
90
−
105
28 35
2.6 3.1
3−
0.9 −
15 30
57
1 1.8
1.9 2.5
32.5 −
27 −
21 −
−−
95 −
−−
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBµV
dBµV
dBµV
Notes
1. Calculated from measured s-parameters.
2. Measured in Fig.35 test circuit.
2001 Apr 25
5
5 Page 
Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1203
DYNAMIC CHARACTERISTICS AMPLIFIER b
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 12 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 °C
input capacitance at gate 1 f = 1 MHz
input capacitance at gate 2 f = 1 MHz
output capacitance
f = 1 MHz
reverse transfer capacitance f = 1 MHz
noise figure
power gain
cross-modulation
f = 10.7 MHz; GS = 20 mS; BS = 0
f = 400 MHz; YS = YS opt
f = 800 MHz; YS = YS opt
f = 200 MHz; GS = 2 mS; BS = BS opt;
GL = 0.5 mS; BL = BL opt; note 1
f = 400 MHz; GS = 2 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
f = 800 MHz; GS = 3.3 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 2
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
25
−
−
−
−
−
−
−
−
−
−
90
−
100
30 40
1.7 2.2
4−
0.85 −
15 30
9 11
0.9 1.5
1.1 1.8
34 −
30 −
25 −
−−
92 −
105 −
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBµV
dBµV
dBµV
Notes
1. Calculated from measured s-parameters.
2. Measured in Fig.35 test circuit.
2001 Apr 25
11
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet BF1203.PDF ] | |
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