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PDF BF1109R Data sheet ( Hoja de datos )
| Número de pieza | BF1109R | |
| Descripción | N-channel dual-gate MOS-FETs | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1109; BF1109R; BF1109WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1997 Sep 03
File under Discrete Semiconductors, SC07
1997 Dec 08
1 page  
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1109; BF1109R; BF1109WR
25
handbook, halfpage
ID
(mA)
20
15
10
5
0
02
MDA613
VG1 = 1.6 V
1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1V
4 6 8 10
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.5 Output characteristics; typical values.
handbook,4h0alfpage
ID
(mA)
30
20
10
0
0 0.5
MDA614
VG2-S = 4 V 3.5 V
3V
2.5 V
2V
1.5 V
1V
1 1.5 2
2.5
VG1 (V)
VDS = 9 V.
Tj = 25 °C.
Fig.6 Transfer characteristics; typical values.
handbook,4h0alfpage
yfs
(mS)
30
20
MDA615
VG2-S = 4 V
3.5 V
3V
10
0
0
2.5 V
2V
10 20 ID (mA) 30
VDS = 9 V.
Tj = 25 °C.
Fig.7 Forward transfer admittance as a function
of drain current; typical values.
handbook,1h6alfpage
ID
(mA)
12
8
4
(1) (2) (3)
(4)
MDA616
0
01 23
(1) VDS = 9 V.
(2) VDS = 7 V.
(3) VDS = 5 V.
(4) VDS = 3 V.
45
VG2-S (V)
Fig.8 Drain current as a function of gate 2
voltage; typical values.
1997 Dec 08
5
5 Page 
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1109; BF1109R; BF1109WR
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
DB
E AX
y
vM A
e
bp w M B
34
HE
Q
21
b1
e1
A
A1
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
vw
y
mm
1.1
0.9
0.1
0.48 0.88
0.38 0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9 1.7
2.5 0.55 0.45
2.1 0.25 0.25
0.2
0.1
0.1
OUTLINE
VERSION
SOT143R
1997 Dec 08
IEC
REFERENCES
JEDEC
EIAJ
11
EUROPEAN
PROJECTION
ISSUE DATE
97-03-10
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BF1109R.PDF ] | |
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