BF1105 PDF даташит
Спецификация BF1105 изготовлена «NXP Semiconductors» и имеет функцию, называемую «N-channel dual-gate MOS-FETs». |
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Детали детали
Номер произв | BF1105 |
Описание | N-channel dual-gate MOS-FETs |
Производители | NXP Semiconductors |
логотип |
16 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1105; BF1105R; BF1105WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1997 Dec 01
File under Discrete Semiconductors, SC07
1997 Dec 02
No Preview Available ! |
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
FEATURES
• Short channel transistor with high
forward transfer admittance to input
capacitance ratio
• Low noise gain controlled amplifier
up to 1 GHz.
• Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
PINNING
PIN
1
2
3
4
DESCRIPTION
source
drain
gate 2
gate 1
APPLICATIONS
• VHF and UHF applications with 5 V
supply voltage, such as television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1105,
BF1105R and BF1105WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
page
4
3
1
Top view
2
MSB014
BF1105 marking code: NEp.
Fig.1 Simplified outline
(SOT143B).
handbook, 2 co3lumns
4
2
Top view
1
MSB035
BF1105R marking code: NAp.
Fig.2 Simplified outline
(SOT143R).
alfpage
3
4
2
Top view
1
MSB842
BF1105WR marking code: NA.
Fig.3 Simplified outline
(SOT343R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
yfs
Cig1-ss
Crss
F
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Xmod
Tj
cross-modulation
operating junction temperature
CONDITIONS
MIN.
−
−
Tamb ≤ 80 °C
−
25
−
f = 1 MHz
−
f = 800 MHz
−
input level for k = 1% at 40 dB AGC 100
−
TYP.
−
−
−
31
2.2
25
1.7
−
−
MAX. UNIT
7V
30 mA
200 mW
− mS
2.7 pF
40 fF
2.5 dB
− dBµV
150 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1997 Dec 02
2
No Preview Available ! |
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS drain-source voltage
ID drain current
IG1 gate 1 current
IG2 gate 2 current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
CONDITIONS
Tamb ≤ 80 °C; note 1; see Fig.4
Note
1. Device mounted on a printed-circuit board.
MIN.
−
−
−
−
−
−65
−
MAX.
7
30
±10
±10
200
+150
+150
UNIT
V
mA
mA
mA
mW
°C
°C
handboo2k,5h0alfpage
Ptot
(mW)
200
150
100
50
0
0 40
MGM243
80 120 160
Tamb (°C)
Fig.4 Power derating curve.
1997 Dec 02
3
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Номер в каталоге | Описание | Производители |
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BF1100R | Dual-gate MOS-FETs | NXP Semiconductors |
BF1100WR | Dual-gate MOS-FET | NXP Semiconductors |
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