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BF1009 PDF даташит

Спецификация BF1009 изготовлена ​​​​«Siemens Semiconductor Group» и имеет функцию, называемую «Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network».

Детали детали

Номер произв BF1009
Описание Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
Производители Siemens Semiconductor Group
логотип Siemens Semiconductor Group логотип 

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BF1009 Даташит, Описание, Даташиты
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1GHz
Operating voltage 9 V
Integrated stabilized bias network
BF 1009
3
4
2
1 VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BF 1009 JKs Q62702-F1613 1 = S 2 = D 3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, TS 76 °C0
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Rthchs
Value
12
25
10
3
200
-55 ...+150
150
370
Unit
V
mA
V
mW
°C
K/W
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
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11
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BF1009 Даташит, Описание, Даташиты
BF 1009
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Drain-source breakdown voltage
ID = 300 µA, -VG1S = 4 V, - VG2S = 4 V
Gate 1 source breakdown voltage
±IG1S = 10 mA, VG2S = VDS = 0
Gate 2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 V, VDS = 0 V
Gate 1 source current
VG1S = 6 V, VG2S = 0 V
Gate 2 source leakage current
±VG2S = 8 V, VG1S = 0 V, VDS = 0 V
Drain current
VDS = 9 V, VG1S = 0 , VG2S = 6 V
Operating current (selfbiased)
VDS = 9 V, VG2S = 6 V
Gate 2-source pinch-off voltage
VDS = 9 V, ID = 100 µA
V(BR)DS
16 -
-V
±V(BR)G1SS 8
- 12
±V(BR)G2SS 9
- 16
+IG1SS
- - 60 µA
±IG2SS
- - 50 nA
IDSS
- - 500 µA
IDSO
8 10 - mA
VG2S(p)
- 0.9 - V
AC characteristics
Forward transconductance (self biased)
VDS = 9 V, VG2S = 6 V, f = 1 kHz
Gate 1-input capacitance (self biased)
VDS = 9 V, VG2S = 6 , f = 1 MHz
Output capacitance (self biased)
VDS = 9 V, VG2S = 6 , f = 100 MHz
Power gain (self biased)
VDS = 9 V, VG2S = 6 , f = 800 MHz
Noise figure (self biased)
VDS = 9 V, VG2S = 6 , f = 800 MHz
Gain control range (self biased)
VDS = 9 V, VG2S = 1 V, f = 800 MHz
gfs
Cg1ss
Cdss
Gps
F800
Gps
- 24 - mS
- 2.1 2.5 pF
- 0.9 -
- 22 - dB
- 1.4 -
40 50
-
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BF1009 Даташит, Описание, Даташиты
BF 1009
Total power dissipation Ptot = f (TS)
Drain current ID = f (VG2S)
300
mW
200
150
100
50
0
0
20 40 60 80 100 120 °C 150
TS
Insertion power gain
| S21 | 2 = f (VG2S)
11
mA
9
8
7
6
5
4
3
2
1
0
0.0 1.0 2.0 3.0 4.0
V 6.0
VG2S
Forward transfer admittance
| Y21 | = f (VG2S)
10
dB
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
0.0 1.0 2.0 3.0 4.0
SSeemmicioconndduuctcotor rGGrorouupp
V 6.0
VG2S
33
26
mS
22
20
18
16
14
12
10
8
6
4
2
0
0.0 1.0 2.0 3.0 4.0
V 6.0
VG2S
Sep-109998-1-1919-081










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