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BF1005SW PDF даташит

Спецификация BF1005SW изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «Silicon N-Channel MOSFET Tetrode».

Детали детали

Номер произв BF1005SW
Описание Silicon N-Channel MOSFET Tetrode
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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BF1005SW Даташит, Описание, Даташиты
BF1005S...
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1 GHz
Operating voltage 5 V
Integrated biasing network
AGC G2
HF G1
Input
Drain HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF1005S
BF1005SR
BF1005SW
Package
SOT143
SOT143R
SOT343
1=S
1=D
1=D
Pin Configuration
2=D 3=G2 4=G1 -
2=S 3=G1 4=G2 -
2=S 3=G1 4=G2 -
-
-
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS 76 °C, BF1005S, BF1005SR
TS 94 °C, BF1005SW
Storage temperature
Channel temperature
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Value
8
25
10
3
200
200
-55 ... 150
150
Marking
NZs
NZs
NZ
Unit
V
mA
V
mW
°C
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 Feb-18-2004









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BF1005SW Даташит, Описание, Даташиты
Thermal Resistance
Parameter
Channel - soldering point1)
BF1005S, BF1005SR
BF1005SW
Symbol
Rthchs
BF1005S...
Value
370
280
Unit
K/W
Electrical Characteristics
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 650 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 , VDS = 0
Gate2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 , VDS = 0
Gate1-source leakage current
VG1S = 6 V, VG2S = 0
Gate 2 source leakage current
±VG2S = 8 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Operating current (selfbiased)
VDS = 5 V, VG2S = 4 V
Gate2-source pinch-off voltage
VDS = 5 V, ID = 100 µA
V(BR)DS
12 -
-V
+V(BR)G1SS 8
- 12
±V(BR)G2SS 8
- 13
+IG1SS
- 100 - µA
±IG2SS
- - 50 nA
IDSS
- - 800 µA
IDSO
8 13 16 mA
VG2S(p)
- 1 -V
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 Feb-18-2004









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BF1005SW Даташит, Описание, Даташиты
BF1005S...
Electrical Characteristics
Parameter
Symbol
AC Characteristics (verified by random sampling)
Forward transconductance
VDS = 5 V, VG2S = 4.5 V
Gate1 input capacitance
VDS = 5 V, VG2S = 4 V, f = 1 MHz
Output capacitance
VDS = 5 V, VG2S = 4 V, f = 100 MHz
gfs
Cg1ss
Cdss
Power gain (self biased)
VDS = 5 V, VG2S = 4 V, f = 800 MHz
Noise figure
Gp
F
VDS = 5 V, VG2S = 4 V, f = 800 MHz
Gain control range
VDS = 5 V, VG2S = 4 V ... 0 V, f = 800 MHz
Gp
Values
Unit
min. typ. max.
26 30
- mS
- 2.4 2.7 pF
- 1.3 -
20 22
- dB
- 1.6 2.1 dB
40 50
-
3 Feb-18-2004










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Номер в каталогеОписаниеПроизводители
BF1005SSilicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)Siemens Semiconductor Group
Siemens Semiconductor Group
BF1005SSilicon N-Channel MOSFET TetrodeInfineon Technologies AG
Infineon Technologies AG
BF1005SRSilicon N-Channel MOSFET TetrodeInfineon Technologies AG
Infineon Technologies AG
BF1005SWSilicon N-Channel MOSFET TetrodeInfineon Technologies AG
Infineon Technologies AG

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