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даташит BLW86 PDF ( Datasheet )

BLW86 Datasheet Download - NXP

Номер произв BLW86
Описание HF/VHF power transistor
Производители NXP
логотип NXP логотип 



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BLW86 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW86
HF/VHF power transistor
Product specification
August 1986







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BLW86 Даташит, Описание, Даташиты
Philips Semiconductors
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Matched
hFE groups are available on request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
Product specification
BLW86
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF
OPERATION
VCE f
V MHz
c.w. (class-B)
s.s.b. (class-AB)
s.s.b. (class-A)
28 175
28 1,6 28
26 1,6 28
PL
W
45
547,5 (P.E.P.)
17 (P.E.P.)
Gp
dB
> 7,5
typ. 19
typ. 22
η
%
> 70
typ. 45
zi YL
mS
0,7 + j1,3 110 j62
−−
−−
d3
dB
typ. 30
typ. 42
PIN CONFIGURATION
halfpage
1
2
4
handbook, halfpage
b
MBB012
3
MSB057
Fig.1 Simplified outline and symbol.
c
e
PINNING - SOT123
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2







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BLW86 Даташит, Описание, Даташиты
Philips Semiconductors
HF/VHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open-collector)
Collector current (average)
Collector current (peak value); f > 1 MHz
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Storage temperature
Operating junction temperature
VCESM
VCEO
VEBO
IC(AV)
ICM
Prf
Tstg
Tj
Product specification
BLW86
max.
65 V
max.
36 V
max.
4V
max.
4A
max.
12 A
max.
105 W
65 to + 150 °C
max.
200 °C
10
handbook, halfpage
IC
(A)
MGP630
Th = 70 °C
Tmb = 25 °C
1
10
VCE (V)
102
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 45 W; Tmb = 83,5 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
150
handbook, halfpage
Prf
(W)
100
50
MGP631
ΙΙΙ
derate by 0.58 W/K
ΙΙ
0.43 W/K
Ι
0
0
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3 R.F. power dissipation; VCE 28 V; f > 1 MHz.
Rth j-mb(dc)
Rth j-mb(rf)
Rth mb-h
=
=
=
2,65 K/W
1,95 K/W
0,3 K/W
August 1986
3










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