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BGA420 PDF даташит

Спецификация BGA420 изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «Si-MMIC-Amplifier in SIEGET 25-Technologie».

Детали детали

Номер произв BGA420
Описание Si-MMIC-Amplifier in SIEGET 25-Technologie
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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BGA420 Даташит, Описание, Даташиты
BGA420
Si-MMIC-Amplifier in SIEGET 25-Technologie
 Cascadable 50 -gain block
 Unconditionally stable
 Gain |S21|2 = 13 dB at 1.8 GHz
IP3out = +13 dBm at 1.8 GHz
(VD = 3 V, ID = typ. 6.7 mA)
 Noise figure NF = 2.3 dB at 1.8 GHz
 Reverse isolation > 28 dB and
return loss IN / OUT > 12 dB at 1.8 GHz
3
4
2
1 VPS05605
VD
4
Circuit Diagram
3 OUT
1
IN
2
GND
EHA07385
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BGA420
BLs 1, IN 2, GND 3, OUT 4, VD SOT343
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
TS = 110 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Symbol
ID
VD
Ptot
PRFin
Tj
TA
Tstg
Value
15
6
90
0
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
 410
K/W
1 Jan-29-2002









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BGA420 Даташит, Описание, Даташиты
BGA420
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics VD = 3 V, Zo = 50 
Device current
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Reverse isolation
f = 1.8 GHz
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Intercept point at the output
f = 1 GHz
1dB compression point
f = 1 GHz
Return loss input
f = 1.8 GHz
Return loss output
f = 1.8 GHz
ID
|S21|2
S12
NF
IP3out
P-1dB
RLin
RLout
5.4 6.7
17 19
15 17
11 13
25 28
8 mA
dB
-
-
-
-
- 1.9 2.3
- 2.2 2.6
- 2.3 2.7
10 13
- dBm
-6 -2.5
-
8 11 - dB
12 16
-
Typical biasing configuration
100 pF 10 nF
+VD
100 pF
43
RF OUT
BGA 420
12
100 pF
GND
RF IN
EHA07386
Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device
to provide a low impedance path.
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground.
2 Jan-29-2002









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BGA420 Даташит, Описание, Даташиты
BGA420
Typical S-Parameters at TA = 25 °C
f S11
GHz MAG
ANG
S21
MAG
ANG
VD = 3 V, Zo = 50
0.1 0.5686 -8.5
0.5 0.5066 -19.2
0.8 0.4404 -28.7
1 0.3904 -34.6
1.5 0.2841 -50.5
1.8 0.2343 -60.6
1.9 0.2136 -64.1
2 0.2062 -68.4
2.4 0.1688 -89.7
3 0.1558 -104.9
9.314
8.393
7.352
6.69
5.244
4.567
4.355
4.165
3.417
2.861
170.6
149.4
135.2
126.8
111.1
104
102
99.7
91.7
85.3
S12
MAG ANG
0.0268
0.0248
0.0236
0.024
0.0314
0.0378
0.0406
0.0426
0.0549
0.0682
12.7
11.7
25.6
35.9
57.2
63.5
66.1
67.2
71.4
73.1
S22
MAG ANG
0.2808
0.2613
0.2361
0.2144
0.1398
0.0979
0.0838
0.0689
0.0224
0.0284
-8.6
-3.8
-6.7
-9
-15
-18.2
-21.5
-22.2
-48
-147.5
Spice-model BGA 420
BGA 420-chip
including parasitics
+V
14
R2
R1 R3
13 OUT
IN 11
C1
C P1 C P2
T1 C P3 C P4
12
GND
EHA07387
T1
R1
R2
R3
C1
CP1
CP2
CP3
CP4
T501
14.5k
140
2.4k
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
3 Jan-29-2002










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Номер в каталогеОписаниеПроизводители
BGA420Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 -gain block Unconditionally stable)Siemens Semiconductor Group
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BGA420Si-MMIC-Amplifier in SIEGET 25-TechnologieInfineon Technologies AG
Infineon Technologies AG
BGA425Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable)Siemens Semiconductor Group
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BGA427Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable)Siemens Semiconductor Group
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