BGA310 PDF даташит
Спецификация BGA310 изготовлена «Siemens Semiconductor Group» и имеет функцию, называемую «Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)». |
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Детали детали
Номер произв | BGA310 |
Описание | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Производители | Siemens Semiconductor Group |
логотип |
4 Pages
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BGA 310
Silicon Bipolar MMIC-Amplifier
Preliminary data
• Cascadable 50 Ω-gain block
• 9 dB typical gain at 1.0 GHz
• 9 dBm typical P-1dB at 1.0 GHz
• 3 dB-bandwidth: DC to 2.4 GHz
RF IN 3
Circuit Diagram
4
1 RF OUT/Bias
3
2
1 VPS05178
Type Marking Ordering Code
BGA 310 BLs Q62702-G0041
2, 4 GND
EHA07312
Pin Configuration
1 RFout/bias 2 GND 3 RF input
Package
4 GND SOT-143
Maximum Ratings
Parameter
Device current
Total power dissipation, TS ≤ 99 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
ID
Ptot
PRFin
Tj
TA
Tstg
RthJS
Value
60
250
10
150
-65 ...+150
-65 ...+150
Unit
mA
mW
dBm
°C
≤ 205
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109498-1-1919-081
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BGA 310
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (VD = 4.7 V, Zo = 50 Ω)
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
|S21|2
dB
- 10 -
-9-
- 8-
Insertion point gain flatness
f = 0.1 GHz to 0.6 GHz
∆ |S21|2
- +-0.5 -
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 2 GHz
NF
- 6-
- 6.5 -
- 7-
1dB compression point
f = 1 GHz
P-1dB
- 9 - dBm
Return loss input
f = 0.1 GHz to 2 GHz
RLin
- 20 - dB
Return loss output
f = 0.1 GHz to 3 GHz
RLout
- 15 -
Typical biasing configuration
ΙD
min.VCC = 7 V
R Bias
C Block
4
IN 3 1
2
RFC (optional)
C Block
VD
OUT
EHA07313
SSeemmicioconndduuctcotor rGGrorouupp
22
RBias = VCC - VD / ID
VD = 4.7V
Sep-109498-1-1919-081
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BGA 310
S-Parameters at TA = 25 °C
f S11
GHz MAG ANG MAG
VD = 4.7 V, Zo = 50Ω
0.01 0.051 176.4
0.1 0.053 168.1
0.3 0.053 141.9
0.5 0.058 123.9
0.8 0.054
98.2
1
0.049
86.1
1.8 0.053 -164.9
2.4 0.161 -177.7
3 0.257 153.9
3.22
3.23
3.22
3.2
3.17
3.12
2.79
2.41
2.03
S21
ANG
179.3
174.9
164.6
154.2
138.7
128.4
88
60.8
38.2
S12
MAG ANG
0.149
0.149
0.15
0.152
0.157
0.162
0.188
0.208
0.225
0.2
1.2
3.4
5.4
8.1
9.7
12
10.6
8.2
S22
MAG ANG
0.159
0.158
0.157
0.155
0.153
0.153
0.16
0.168
0.178
-0.5
-6.1
-19
-31.7
-51.3
-64.3
-106.6
-123.7
-133.1
Insertion power gain |S21|2 = f ( f )
VD = 4.7 V, ID = 42 mA
25
dB
Noise figure NF = f ( f )
VD = 4.7 V, ID = 42 mA
10
dB
15 6
10 4
52
0
10
-1
10 0
SSeemmicioconndduuctcotor rGGrorouupp
GHz
f
10 1
33
0
10
-1
10 0
GHz
10 1
f
Sep-109498-1-1919-081
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Номер в каталоге | Описание | Производители |
BGA310 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) | Siemens Semiconductor Group |
BGA312 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) | Siemens Semiconductor Group |
BGA318 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | Siemens Semiconductor Group |
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DataSheet26.com | 2020 | Контакты | Поиск |