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BGA2012 PDF даташит

Спецификация BGA2012 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «1900 MHz high linear low noise amplifier».

Детали детали

Номер произв BGA2012
Описание 1900 MHz high linear low noise amplifier
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BGA2012 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BGA2012
1900 MHz high linear low noise
amplifier
Product specification
Supersedes data of 2000 Sep 06
2000 Dec 04









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BGA2012 Даташит, Описание, Даташиты
Philips Semiconductors
1900 MHz high linear low noise amplifier
Product specification
BGA2012
FEATURES
Low current, low voltage
High linearity
High power gain
Low noise
Integrated temperature compensated biasing
Control pin for adjustment bias current.
PINNING
PIN
1
2
3
4
5, 6
RF in
VC
VS
RF out
GND
DESCRIPTION
APPLICATIONS
RF front end
Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
handbook, halfpage
65
4
VS
VC
BIAS
CIRCUIT
12
Top view
3
MBL251
RF in
RF out
GND
Marking code: A6-
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
IS
IC
|s21|2
PARAMETER
DC supply voltage
DC supply current
DC control current
insertion power gain
NF noise figure
CONDITIONS
RF input AC coupled
VC = VS
in application circuit, see Fig.2;
f = 1900 MHz
IS = 7 mA; f = 1900 MHz
TYP.
3
7.5
0.11
16
MAX.
4.5
UNIT
V
mA
mA
dB
1.7
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
VS
VC
IS
IC
Ptot
Tstg
Tj
PARAMETER
DC supply voltage
voltage on control pin
supply current
control current
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
RF input AC coupled
forced by DC voltage on RF input
Ts 100 °C
MIN.
65
MAX.
4.5
VS
15
0.25
70
+150
150
UNIT
V
V
mA
mA
mW
°C
°C
2000 Dec 04
2









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BGA2012 Даташит, Описание, Даташиты
Philips Semiconductors
1900 MHz high linear low noise amplifier
Product specification
BGA2012
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to solder point
CONDITIONS
Ptot = 135 mW; Ts 100 °C
VALUE
350
UNIT
K/W
CHARACTERISTICS
RF input AC coupled; VS = 3 V; IS = 7 mA; f = 1900 MHz; Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
IS
IC
RL IN
RL OUT
|s21|2
NF
IP3in
supply current
control current
return losses input
return losses output
insertion power gain
noise figure
input intercept point
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application (see Fig.2)
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2; IS = 7 mA
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
5
7.5
0.11
11
20
14
9
10
8
14
16
14
1.7
2.2
2.3
7
7
10
MAX.
10
UNIT
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
2000 Dec 04
3










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Номер в каталогеОписаниеПроизводители
BGA20121900 MHz high linear low noise amplifierNXP Semiconductors
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