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BG3123R PDF даташит

Спецификация BG3123R изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «DUAL N-Channel MOSFET Tetrode».

Детали детали

Номер произв BG3123R
Описание DUAL N-Channel MOSFET Tetrode
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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BG3123R Даташит, Описание, Даташиты
BG3123...
DUAL N-Channel MOSFET Tetrode
Two gain controlled input stages for UHF
and VHF -tuners e.g. (NTSC, PAL)
Optimized for UHF (amp. B) and VHF (amp. A)
Integrated gate protection diodes
High AGC-range, low noise figure, high gain
Improved cross modulation at gain reduction
4
5
6
3
2
1
VPS05604
BG3123
65
B
A
12
4
3
BG3123R
65
B
A
12
4
3
AGC G2
HF G1
Input
RG1
VGG
Drain HF Output
+ DC
GND
EHA07461
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BG3123
BG3123R***
Package
SOT363
SOT363
Pin Configuration
1=G1* 2=G2 3=D* 4=D** 5=S
1=G1** 2=S 3=D** 4=D* 5=G2
Marking
6=G1** KOs
6=G1* KRs
* For amp. A; ** for amp. B
*** Target Data
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Symbol
VDS
ID
±IG1/2SM
±VG1/G2S
Ptot
Tstg
Tch
Value
8
25
20
1
6
200
-55 ... 150
150
Unit
V
mA
V
mW
°C
1 Feb-27-2004









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BG3123R Даташит, Описание, Даташиты
BG3123...
Thermal Resistance
Parameter
Channel - soldering point1)
Symbol
Rthchs
Value
150
Unit
K/W
Electrical Characteristics
Parameter
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, VG1S = 0 V, VG2S = 0 V
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 V, VDS = 0 V
Gate2-source breakdown voltage
+IG2S = 10 mA, VG1S = 0 V, VDS = 0 V
Gate1-source leakage current
VG1S = 6 V, VG2S = 0 V
Gate2-source leakage current
VG2S = 8 V, VG1S = 0 V, VDS = 0 V
Drain current
VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 60 k,
amp. A
VDS = 5 V, VG2S = 4 V, RG1 = 50 k,
amp. B
Symbol
Values
Unit
min. typ. max.
V(BR)DS
12 -
-V
+V(BR)G1SS 6
- 15
+V(BR)G2SS 6
- 15
+IG1SS
- - 50 µA
+IG2SS
- - 50 nA
IDSS
- - 10 µA
IDSX
mA
- 14 -
- 14 -
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
Gate2-source pinch-off voltage
VDS = 5 V, ID = 20 µA
VG1S(p)
VG2S(p)
- 0.7 - V
- 0.6 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 Feb-27-2004









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BG3123R Даташит, Описание, Даташиты
BG3123...
Electrical Characteristics
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics VDS = 5V, VG2S = 4V, (ID = 14 mA) (verified by random sampling)
Forward transconductance
gfs
mS
amp. A
- 30 -
amp. B
- 25 -
Gate1 input capacitance
f = 10 MHz, amp. A
Cg1ss
pF
- 1.9 -
f = 10 MHz, amp. B
- 1.5 -
Output capacitance
f = 10 MHz, amp. A
f = 10 MHz, amp. B
Cdss
- 1.3 -
- 1.1 -
Power gain
f = 800 MHz, amp. A
f = 800 MHz, amp. B
f = 45 MHz, amp. A
f = 45 MHz, amp. B
Gp dB
- 25 -
- 24 -
- 32 -
- 30 -
Noise figure
f = 800 MHz, amp. A
f = 800 MHz, amp. B
f = 45 MHz, amp. A
f = 45 MHz, amp. B
F dB
- 1.8 -
- 1.8 -
- 1.4 -
- 1.6 -
Gain control range
VG2S = 4 ... 0 V , f = 800 MHz
Gp
Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod
amp.A , AGC = 0 dB
amp. B, AGC = 0 dB
amp. A , AGC = 10 dB
amp. B , AGC = 10 dB
amp. A, AGC = 40 dB
amp. B, AGC = 40 dB
45 -
-
90 96
90 97
- 91
- 94
98 103
98 104
-
-
-
-
-
-
-
3 Feb-27-2004










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Номер в каталогеОписаниеПроизводители
BG3123DUAL N-Channel MOSFET TetrodeInfineon Technologies AG
Infineon Technologies AG
BG3123RDUAL N-Channel MOSFET TetrodeInfineon Technologies AG
Infineon Technologies AG

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