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BS616LV1623TCG55 PDF даташит

Спецификация BS616LV1623TCG55 изготовлена ​​​​«ETC» и имеет функцию, называемую «Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable».

Детали детали

Номер произв BS616LV1623TCG55
Описание Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Производители ETC
логотип ETC логотип 

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BS616LV1623TCG55 Даташит, Описание, Даташиты
BSI Very Low Power/Voltage CMOS SRAM
1M x 16 or 2M x 8 bit switchable
BS616LV1623
„ FEATURES
• Vcc operation voltage : 2.7 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 45mA (@55ns) operating current
I -grade: 46mA (@55ns) operating current
C-grade: 36mA (@70ns) operating current
I -grade: 37mA (@70ns) operating current
3.0uA (Typ.) CMOS standby current
• High speed access time :
-55 55ns
-70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
„ DESCRIPTION
The BS616LV1623 is a high performance, very low power CMOS Static
Random Access Memory organized as 1,048,676 words by 16 bits or
2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc
range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 3.0uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85oC .
This device provide three control inputs and three states output drivers
for easy memory expansion.
The BS616LV1623 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV1623 is available in 48-pin 12mmx20mm TSOP1 package.
„ PRODUCT FAMILY
PRODUCT FAMILY
BS616LV1623TC
OPERATING
TEMPERATURE
+0 O C to +70 O C
Vcc
RANGE
SPEED
(ns)
55ns : 3.0~3.6V
70ns : 2.7~3.6V
2.7V ~ 3.6V 55 / 70
BS616LV1623TI
-40 O C to +85 O C 2.7V ~ 3.6V 55 / 70
POWER DISSIPATION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
Vcc=3V
Vcc=3V Vcc=3V
55ns
70ns
PKG TYPE
10 uA
45mA 36mA TSOP1-48(12mmx20mm)
20 uA
46mA 37mA TSOP1-48(12mmx20mm)
„ PIN CONFIGURATIONS
A4
A3
A2
A1
A0
/CE1
D0
D1
D2
D3
Vcc
CIO
Vss
D4
D5
D6
D7
A19
/WE
A18
A17
A16
A15
A14
1
9
10
13
16
17
24
BS616LV1623TC
BS616LV1623T I
48 A5
47 A6
46 A7
/OE
/UB
/LB
CE2
SAE
D15
D14
D13
37 D12
Vss
Vcc
D11
D10
D9
D8
A8
A9
A10
27 A11
A12
25 A13
48-pin 12mmx20mm TSOP1 top view
„ BLOCK DIAGRAM
A19
A15
A14
A13
A12
A11
A10
A9
A8
A17
A7
A6
D0
.
.
.
.
D15
Address
Input
Buffer
24
Row
4096
Decoder
16(8)
.
.
. 16(8)
.
Data
Input
Buffer
16(8)
16(8)
Data
Output
Buffer
Memory Array
4096 x 4096
4096
Column I/O
Write Driver
Sense Amp
256(512)
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
Control
16(18)
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 A18 (SAE)
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS616LV1623
1
Revision 1.1
Jan. 2004









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BS616LV1623TCG55 Даташит, Описание, Даташиты
BSI
BS616LV1623
„ PIN DESCRIPTIONS
Name
A0-A19 Address Input
Function
These 20 address inputs select one of the 1,048,576 x 16-bit words in the RAM.
SAE Address Input
CIO x8/x16 select input
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
OE Output Enable Input
LB and UB Data Byte Control Input
D0 - D15 Data Input/Output Ports
This address input incorporates with the above 20 address inputs select one of the
2,097,152 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH.
This input selects the organization of the SRAM. 1,048,576 x 16-bit words
configuration is selected if CIO is HIGH. 2,097,152 x 8-bit bytes configuration is
selected if CIO is LOW.
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
Lower byte and upper byte data input/output control pins. The chip is deselected when
both LB and UB pins are HIGH.
These 16 bi-directional ports are used to read data from or write data into the RAM.
Vcc Power Supply
Gnd
Ground
R0201-BS616LV1623
2
Revision 1.1
Jan. 2004









No Preview Available !

BS616LV1623TCG55 Даташит, Описание, Даташиты
BSI
„ TRUTH TABLE
BS616LV1623
MODE
Fully Standby
Output Disable
Read from SRAM
( WORD mode )
Write to SRAM
( WORD mode )
Read from SRAM
( BYTE Mode )
Write to SRAM
( BYTE Mode )
CE1 CE2 OE WE CIO LB UB SAE
D0~7 D8~15 VCC Current
HX
XX
XX
X
X
High-Z High-Z
ICCSB, ICCSB1
XL
XX
L H H H X X X X High-Z High-Z
ICC
LH
Dout High-Z
L H L H H H L X High-Z Dout
ICC
LL
Dout
Dout
LH
Din X
L H X L H H L X X Din
ICC
LL
Din Din
L H L H L X X A-1 Dout High-Z
ICC
L H X L L X X A-1 Din
X
ICC
„ ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
VTERM
TBIAS
TSTG
PT
IOUT
PA R A M E T E R
Terminal Voltage with
Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
R AT IN G
-0.5 to
Vcc+0.5
-40 to +85
-60 to +150
1.0
20
UNITS
V
OC
OC
W
mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
„ OPERATING RANGE
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0 O C to +70 O C
-40 O C to +85 O C
Vcc
2.7V ~ 3.6V
2.7V ~ 3.6V
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
VIN=0V
VI/O=0V
MAX.
10
12
UNIT
pF
pF
1. This parameter is guaranteed and not 100% tested.
R0201-BS616LV1623
3
Revision 1.1
Jan. 2004










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