BT134-600 PDF даташит
Спецификация BT134-600 изготовлена «NXP Semiconductors» и имеет функцию, называемую «4Q Triac». |
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Детали детали
Номер произв | BT134-600 |
Описание | 4Q Triac |
Производители | NXP Semiconductors |
логотип |
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BT134-600
4Q Triac
21 November 2013
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT82 plastic package intended for use in
general purpose bidirectional switching and phase control applications.
2. Features and benefits
• Compact package
• High blocking voltage capability
• Less sensitive gate for improved noise immunity
• Planar passivated for voltage ruggedness and reliability
• Triggering in all four quadrants
3. Applications
• General purpose low power motor control
• Home appliances
• Industrial process control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 25 A
- - 4A
- 5 35 mA
- 8 35 mA
- 11 35 mA
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NXP Semiconductors
BT134-600
4Q Triac
Symbol
Parameter
Conditions
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- 30 70 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2
mounting base; main
terminal 2
Simplified outline
Graphic symbol
T2
sym051
T1
G
123
SIP3 (SOT82)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BT134-600
SIP3
Description
plastic single-ended package; 3 leads (in-line)
Version
SOT82
BT134-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 November 2013
© NXP N.V. 2013. All rights reserved
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NXP Semiconductors
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G-
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G-
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
BT134-600
4Q Triac
Min Max Unit
- 600 V
- 4A
- 25 A
- 27 A
- 3.1 A2s
- 50 A/µs
- 50 A/µs
- 50 A/µs
- 10 A/µs
- 2A
- 5W
- 0.5 W
-40 150 °C
- 125 °C
BT134-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 November 2013
© NXP N.V. 2013. All rights reserved
3 / 13
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