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BT134-500G PDF даташит

Спецификация BT134-500G изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Triacs».

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Номер произв BT134-500G
Описание Triacs
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BT134-500G Даташит, Описание, Даташиты
Philips Semiconductors
Triacs
Product specification
BT134 series
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling performance. Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BT134-
BT134-
BT134-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500
500F
500G
500
4
25
600
600F
600G
600
4
25
800
800F
800G
800
4
25
V
A
A
PINNING - SOT82
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
PIN CONFIGURATION
1 23
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave; Tmb 107 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
5001
MAX.
-600
6001
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A2s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
August 1997
1
Rev 1.200









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BT134-500G Даташит, Описание, Даташиты
Philips Semiconductors
Triacs
Product specification
BT134 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
MIN.
-
-
-
TYP.
-
-
100
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BT134-
... ...F ...G
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
-
5 35 25 50 mA
T2+ G-
-
8 35 25 50 mA
T2- G-
- 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA
IL Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
-
7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+
-
7 30 30 45 mA
IH Holding current
VD = 12 V; IGT = 0.1 A
- 5 15 15 30 mA
VT On-state voltage
IT = 5 A
- 1.4
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
- 0.7
VD = 400 V; IT = 0.1 A;
0.25 0.4
Tj = 125 ˚C
ID Off-state leakage current VD = VDRM(max);
- 0.1
Tj = 125 ˚C
1.70
1.5
-
0.5
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT134- ... ...F ...G
dVD/dt
Critical rate of rise of
off-state voltage
VDM =67% VDRM(max);
100 50 200 250
Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt
Critical rate of change of
commutating voltage
VDM = 400 V; Tj = 95 ˚C;
IT(RMS) = 4 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
-
- 10 50
tgt
Gate controlled turn-on ITM = 6 A; VD = VDRM(max);
-
-
-
2
time IG = 0.1 A;
dIG/dt = 5 A/µs;
- V/µs
- V/µs
- µs
August 1997
2
Rev 1.200









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BT134-500G Даташит, Описание, Даташиты
Philips Semiconductors
Triacs
Product specification
BT134 series
Ptot / W
8
BT136
Tmb(max) / C
101
7
61
5
4
3
= 180
120
90
60
30
104
107
110
113
116
2 119
1 122
0 125
012345
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000 ITSM / A
BT136
IT ITSM
T time
Tj initial = 25 C max
100
dIT/dt limit
T2- G+ quadrant
10
10us
100us
1ms
10ms
100ms
T/s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 20ms.
ITSM / A
30
25
20
15
BT136
IT ITSM
T time
Tj initial = 25 C max
10
5
01 10 100 1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
5
4
BT136
107 C
3
2
1
0-50 0 50 100 150
Tmb / C
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
12 IT(RMS) / A
BT136
10
8
6
4
2
0
0.01 0.1
1
surge duration / s
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb 107˚C.
VGT(Tj)
1.6 VGT(25 C)
BT136
1.4
1.2
1
0.8
0.6
0.4-50
0 50 100 150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
August 1997
3
Rev 1.200










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