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BT131-500 PDF даташит

Спецификация BT131-500 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Triacs logic level».

Детали детали

Номер произв BT131-500
Описание Triacs logic level
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BT131-500 Даташит, Описание, Даташиты
Philips Semiconductors
Triacs
logic level
Product specification
BT131 series
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope, intended
for use in general purpose
bidirectional switching and phase
control applications. These devices
are intended to be interfaced directly
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BT131- 500 600
Repetitive peak off-state voltages
500 600
RMS on-state current
11
Non-repetitive peak on-state current 16 16
V
A
A
PINNING - TO92
PIN DESCRIPTION
1 main terminal 2
2 gate
3 main terminal 1
PIN CONFIGURATION
3 21
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave; Tlead 51 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 1.5 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500
5001
-600
6001
1
16
17.6
1.28
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
A2s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
April 1998 1 Rev 1.000









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BT131-500 Даташит, Описание, Даташиты
Philips Semiconductors
Triacs
logic level
Product specification
BT131 series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-lead
Rth j-a
Thermal resistance
junction to lead
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
pcb mounted;lead length = 4mm
MIN.
-
-
-
TYP.
-
-
150
MAX.
60
80
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT Gate trigger current
IL Latching current
IH Holding current
VT On-state voltage
VGT Gate trigger voltage
ID Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
IT = 2.0 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
tgt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 1 k
ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
MIN. TYP. MAX. UNIT
- 0.4 3 mA
- 1.3 3 mA
- 1.4 3 mA
- 3.8 7 mA
- 1.2 5 mA
- 4.0 8 mA
- 1.0 5 mA
- 2.5 8 mA
- 1.3 5 mA
- 1.2 1.5 V
- 0.7 1.5 V
0.2 0.3
-
V
- 0.1 0.5 mA
MIN.
5
-
TYP. MAX. UNIT
15 - V/µs
2 - µs
April 1998 2 Rev 1.000









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BT131-500 Даташит, Описание, Даташиты
Philips Semiconductors
Triacs
logic level
Product specification
BT131 series
1.4 Ptot / W
1.2
1
0.8
0.6
0.4
BT132D
1
Tmb(max) / C
41
=180 53
120 65
90
77
60
89
30
101
0.2 113
00 125
0 0.2 0.4 0.6 0.8 1 1.2
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000 ITSM / A
100
BT132D
IT ITSM
T time
Tj initial = 25 C max
dI T/dt limit
T2- G+ quadrant
10
10us
100us
1ms
10ms
100ms
T/s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 20ms.
ITSM / A
20
15
10
BT136
IT ITSM
T time
Tj initial = 25 C max
5
0
10 100 1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
1.2
1
BT132D
51 C
0.8
0.6
0.4
0.2
0-50 0
50 100 150
Tlead / C
Fig.4. Maximum permissible rms current IT(RMS) ,
versus lead temperature Tlead.
3 IT(RMS) / A
BT132D
2.5
2.0
1.5
1
0.5
0
0.01
0.1
1
surge duration / s
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tlead 51˚C.
VGT(Tj)
1.6 VGT(25 C)
BT136
1.4
1.2
1
0.8
0.6
0.4-50
0 50 100 150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
April 1998 3 Rev 1.000










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