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PDF BSS138 Data sheet ( Hoja de datos )
| Número de pieza | BSS138 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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 1. N-Ch, MOSFET ( PDF )  Hay una vista previa y un enlace de descarga de BSS138 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – MARCH 1996
7
PARTMARKING DETAIL
– SS
BSS138
S
D
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 50 V
Continuous Drain Current at Tamb=25°C
ID
200 mA
Pulsed Drain Current
IDM 800 mA
Gate-Source Voltage
VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 360 mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
50
V ID=0.25mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
0.5
1.5 V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
IGSS
IDSS
RDS(on)
100 nA
0.5 µA
5 µA
100 nA
3.5 Ω
VGS=± 20V, VDS=0V
VDS=50V, VGS=0
VDS=50V, VGS=0V, T=125°C(2)
VDS=20V, VGS=0
VGS=5V,ID=200mA
Forward
Transconductance(1)(2)
gfs
120
mS VDS=25V,ID=200mA
Input Capacitance (2)
Common Source
Output Capacitance (2)
Ciss
Coss
50 pF
25 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss
8 pF
Turn-On Delay Time (2)(3) td(on)
10 ns
Rise Time (2)(3)
tr
Turn-Off Delay Time (2)(3) td(off)
10 ns VDD ≈30V, ID=280mA
15 ns
Fall Time (2)(3)
tf
25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 72
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BSS138.PDF ] | |
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