BSH108 PDF даташит
Спецификация BSH108 изготовлена «NXP Semiconductors» и имеет функцию, называемую «N-channel enhancement mode field-effect transistor». |
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Детали детали
Номер произв | BSH108 |
Описание | N-channel enhancement mode field-effect transistor |
Производители | NXP Semiconductors |
логотип |
13 Pages
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BSH108
N-channel enhancement mode field-effect transistor
Rev. 02 — 25 October 2000
M3D088
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BSH108 in SOT23.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.
3. Applications
s Battery management
s High speed switch
c
c s Low power DC to DC converter.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 source (s)
3
3 drain (d)
12
Top view
MSB003
SOT23
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
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Philips Semiconductors
BSH108
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 150 °C
Tsp = 25 °C; VGS = 5 V
Tsp = 25 °C
VGS = 10 V; ID = 1 A
VGS = 5 V; ID = 1 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tj = 25 to 150 °C
Tj = 25 to 150 °C; RGS = 20 kΩ
Tsp = 25 °C; VGS = 5 V; Figure 2 and 3
Tsp = 100 °C; VGS = 5 V; Figure 2
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tsp = 25 °C; Figure 1
IS source (diode forward) current (DC) Tsp = 25 °C
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
Typ Max Unit
− 30 V
− 1.9 A
− 0.83 W
− 150 °C
77 120 mΩ
102 140 mΩ
Min Max Unit
− 30 V
− 30 V
− ±20 V
− 1.9 A
− 1.2 A
− 7.5 A
− 0.83 W
−65 +150 °C
−65 +150 °C
− 0.83 A
− 3.3 A
9397 750 07652
Product specification
Rev. 02 — 25 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
2 of 13
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Philips Semiconductors
BSH108
N-channel enhancement mode field-effect transistor
120
Pder
(%)
100
80
03aa17
120
Ider
(%)100
80
03aa25
60 60
40
20
0
0 25 50 75 100 125 150 175
Tsp (oC)
Pder
=
-------P----t--o--t-------
P
×
100
%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
40
20
0
0 25 50 75 100 125 150 175
Tsp (oC)
VGS ≥ 5 V
Ider = -I------I---D-------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
10
ID
(A)
1
RDSon = VDS/ ID
03aa80
tp = 10 µs
100 µs
10-1
P
10-2
δ
=
tp
T
10-3
10-1
tp
T
t
1
D.C.
10
1 ms
10 ms
100 ms
Tsp = 25oC
VDS (V)
102
Tsp = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07652
Product specification
Rev. 02 — 25 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
3 of 13
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