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PDF BSH107 Data sheet ( Hoja de datos )
| Número de pieza | BSH107 | |
| Descripción | N-channel enhancement mode MOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH107
FEATURES
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDS = 20 V
ID = 1.75 A
RDS(ON) ≤ 90 mΩ (VGS = 2.5 V)
VGS(TO) ≥ 0.4 V
GENERAL DESCRIPTION
N-channel, enhancement mode,
logic level, field-effect power
transistor. This device has very low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH107 is supplied in the
SOT457 subminiature surface
mounting package.
PINNING
PIN
DESCRIPTION
1,2,5,6 drain
3 gate
4 source
SOT457
6 54
Top view
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
RGS = 20 kΩ
Ta = 25 ˚C
Ta = 100 ˚C
Ta = 25 ˚C
Ta = 25 ˚C
Ta = 100 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-a
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
20
20
±8
1.75
1.1
7
0.417
0.17
150
UNIT
V
V
V
A
A
A
W
W
˚C
TYP.
300
MAX.
-
UNIT
K/W
August 1998
1
Rev 1.000
1 page  
Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH107
Gate-source voltage, VGS (V)
4.5
VDD = 20 V
4 RD = 20 Ohms
3.5 Tj = 25 C
3
2.5
2
1.5
1
0.5
0
0246
Gate charge, QG (nC)
BSH107
8
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG)
Source-Drain Diode Current, IF (A)
-5
BSH107
-4.5
-4
-3.5
-3
-2.5
150 C
-2
Tj = 25 C
-1.5
-1
-0.5
0
0
-0.2 -0.4 -0.6 -0.8
-1
Drain-Source Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
August 1998
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BSH107.PDF ] | |
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