BSH106 PDF даташит
Спецификация BSH106 изготовлена «NXP Semiconductors» и имеет функцию, называемую «N-channel enhancement mode MOS transistor». |
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Детали детали
Номер произв | BSH106 |
Описание | N-channel enhancement mode MOS transistor |
Производители | NXP Semiconductors |
логотип |
7 Pages
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Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH106
FEATURES
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDS = 20 V
ID = 1.05 A
RDS(ON) ≤ 250 mΩ (VGS = 2.5 V)
VGS(TO) ≥ 0.4 V
GENERAL DESCRIPTION
N-channel, enhancement mode,
logic level, field-effect power
transistor. This device has very low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH106 is supplied in the
SOT363 subminiature surface
mounting package.
PINNING
PIN
DESCRIPTION
1,2,5,6 drain
3 gate
4 source
SOT363
6 54
Top view
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
RGS = 20 kΩ
Ta = 25 ˚C
Ta = 100 ˚C
Ta = 25 ˚C
Ta = 25 ˚C
Ta = 100 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-a
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
20
20
±8
1.05
0.67
4.2
0.417
0.17
150
UNIT
V
V
V
A
A
A
W
W
˚C
TYP.
300
MAX.
-
UNIT
K/W
August 1998
1
Rev 1.000
No Preview Available ! |
Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH106
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
gfs
IGSS
IDSS
Qg(tot)
Qgs
Qgd
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 10 µA
VDS = VGS; ID = 1 mA
Tj = 150˚C
VGS = 4.5 V; ID = 0.6 A
VGS = 2.5 V; ID = 0.6 A
VGS = 1.8 V; ID = 0.3 A
VGS = 2.5 V; ID = 0.6 A; Tj = 150˚C
VDS = 16 V; ID = 0.6 A
VGS = ±8 V; VDS = 0 V
VDS = 16 V; VGS = 0 V;
Tj = 150˚C
ID = 1 A; VDD = 20 V; VGS = 4.5 V
td on Turn-on delay time
tr Turn-on rise time
td off Turn-off delay time
tf Turn-off fall time
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VDD = 20 V; ID = 1 A;
VGS = 8 V; RG = 6 Ω
Resistive load
VGS = 0 V; VDS = 16 V; f = 1 MHz
MIN. TYP. MAX. UNIT
20 -
-V
0.4 0.57 -
V
0.1 -
-V
- 140 200 mΩ
- 180 250 mΩ
- 240 300 mΩ
- 270 375 mΩ
0.5 1.6 -
S
- 10 100 nA
- 50 100 nA
- 1.3 10 µA
- 3.9 - nC
- 0.4 - nC
- 1.4 - nC
- 2 - ns
- 4.5 - ns
- 45 - ns
- 20 - ns
- 152 -
- 71 -
- 33 -
pF
pF
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
Ta = 25 ˚C
current
IDRM Pulsed reverse drain current
VSD Diode forward voltage
IF = 0.5 A; VGS = 0 V
trr Reverse recovery time IF = 0.5 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 16 V
MIN. TYP. MAX. UNIT
- - 1.05 A
- - 4.2 A
- 0.74 1
V
- 27 - ns
- 19 - nC
August 1998
2
Rev 1.000
No Preview Available ! |
Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH106
Normalised Power Dissipation, PD (%)
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Ambient Temperature, Ta (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Ta)
Normalised Drain Current, ID (%)
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Ambient Temperature, Ta (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Ta); conditions: VGS ≥ 4.5 V
Peak Pulsed Drain Current, IDM (A)
100
BSH105
10 RDS(on) = VDS/ ID
1
0.1 d.c.
tp = 100 us
1 ms
10 ms
100 ms
0.01
0.1
1 10
Drain-Source Voltage, VDS (V)
100
Fig.3. Safe operating area. Ta = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Peak Pulsed Drain Current, IDM (A)
1000
BSH105
D = 0.5
100
0.2
0.1
0.05
10 0.02
single pulse
1
PD tp D = tp/T
0.1
1E-06
1E-05
T
1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
Fig.4. Transient thermal impedance.
Zth j-a = f(t); parameter D = tp/T
Drain Current, ID (A)
5
4.5V
4.5
4
Tj = 25 C
3.5
2.5V
BSH105
2.1 V
3
VGS = 1.9 V
2.5
2 1.7 V
1.5
1 1.5 V
0.5 1.3 V
1.1 V
0
0 0.5 1 1.5 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Drain-Source On Resistance, RDS(on) (Ohms)
0.5
1.5 V 1.7 V
1.9 V
2.1 V
0.45
BSH105
0.4
0.35
0.3
0.25
2.5 V
0.2
0.15
VGS = 4.5 V
0.1
0.05 Tj = 25 C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Drain Current, ID (A)
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
August 1998
3
Rev 1.000
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