BSH104 PDF даташит
Спецификация BSH104 изготовлена «NXP Semiconductors» и имеет функцию, называемую «N-channel enhancement mode MOS transistor». |
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Детали детали
Номер произв | BSH104 |
Описание | N-channel enhancement mode MOS transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BSH104
N-channel enhancement mode
MOS transistor
Objective specification
File under Discrete Semiconductors, SC13b
1997 Nov 26
No Preview Available ! |
Philips Semiconductors
N-channel enhancement mode
MOS transistor
Objective specification
BSH104
FEATURES
• High-speed switching
• No secondary breakdown
• Direct interface to C-MOS, TTL, etc.
• Very low threshold.
PINNING
PIN
1
2
3
SYMBOL
DESCRIPTION
g gate
s source
d drain
APPLICATIONS
• ‘Glue-logic’: interface between logic blocks and/or
periphery
• Power management
• DC to DC converters
• General purpose switch
• Battery powered applications.
handbook, halfpage
3
g
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
1
Top view
2
MAM273
d
s
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VSD
VGS
VGSth
ID
RDSon
Ptot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
VGD = 0; IS = 0.5 A
VDS = VGS; ID = 1 mA
Ts = 80 °C
VGS = 2.5 V; ID = 0.65 A
Ts = 80 °C
MIN.
−
−
−
0.4
−
−
−
MAX.
12
1
±8
−
1.1
0.3
0.5
UNIT
V
V
V
V
A
Ω
W
1997 Nov 26
2
No Preview Available ! |
Philips Semiconductors
N-channel enhancement mode
MOS transistor
Objective specification
BSH104
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS drain-source voltage (DC)
VGS gate-source voltage (DC)
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
IS source current (DC)
ISM peak pulsed source current
CONDITIONS
Ts = 80 °C; note 1
note 2
Ts = 80 °C
Tamb = 25 °C; note 3
Tamb = 25 °C; note 4
Ts = 80 °C
note 2
MIN.
−
−
−
−
−
−
−
−55
−55
−
−
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 90 K/W.
MAX.
12
±8
1.1
4.5
0.5
0.75
0.54
+150
+150
UNIT
V
V
A
A
W
W
W
°C
°C
0.5 A
2A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
140
UNIT
K/W
1997 Nov 26
3
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