DataSheet26.com

BSH103 PDF даташит

Спецификация BSH103 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «N-channel enhancement mode MOS transistor».

Детали детали

Номер произв BSH103
Описание N-channel enhancement mode MOS transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

12 Pages
scroll

No Preview Available !

BSH103 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH103
N-channel enhancement mode
MOS transistor
Product specification
Supersedes data of 1998 Jan 30
File under Discrete Semiconductors, SC13b
1998 Feb 11









No Preview Available !

BSH103 Даташит, Описание, Даташиты
Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH103
FEATURES
Very low threshold
High-speed switching
No secondary breakdown
Direct interface to C-MOS, TTL etc.
PINNING - SOT23
PIN SYMBOL
1g
2s
3d
DESCRIPTION
gate
source
drain
APPLICATIONS
Power management
DC to DC converters
Battery powered applications
‘Glue-logic’; interface between logic blocks and/or
periphery
General purpose switch.
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
handbook, halfpage
3
d
g
1
Top view
2
MAM273
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
VSD
VGS
VGSth
ID
RDSon
Ptot
PARAMETERS
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
VGD = 0; IS = 0.5 A
VDS = VGS; ID = 1 mA
Ts = 80 °C
VGS = 2.5 V; ID = 0.5 A
Ts = 80 °C
MIN.
0.4
MAX.
30
1
±8
0.85
0.5
0.5
UNIT
V
V
V
V
A
W
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Feb 11
2









No Preview Available !

BSH103 Даташит, Описание, Даташиты
Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH103
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS drain-source voltage (DC)
VGS gate-source voltage (DC)
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
IS source current (DC)
ISM peak pulsed source current
CONDITIONS
Ts = 80 °C; note 1
note 2
Ts = 80 °C
Tamb = 25 °C; note 3
Tamb = 25 °C; note 4
Ts = 80 °C
note 2
MIN.
55
55
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W.
MAX.
30
±8
0.85
3.4
0.5
0.75
0.54
+150
+150
0.5
2
UNIT
V
V
A
A
W
W
W
°C
°C
A
A
0.6
handbook, halfpage
Ptot
(W)
0.4
MGM190
0.2
0
0 40 80 120 160
Ts (°C)
Fig.2 Power derating curve.
1998 Feb 11
handbook,1h0alfpage
IDS
(A)
1
(1)
MBK502
(2)
101
P
102
δ=
tp
T
101301
tp
T
1
t
DC
10 VDS (V) 102
δ = 0.01; Ts = 80 °C.
(1) RDSon limitation.
(2) Pulsed.
Fig.3 SOAR.
3










Скачать PDF:

[ BSH103.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BSH101N-channel enhancement mode MOS transistorNXP Semiconductors
NXP Semiconductors
BSH102N-channel enhancement mode MOS transistorNXP Semiconductors
NXP Semiconductors
BSH103N-channel enhancement mode MOS transistorNXP Semiconductors
NXP Semiconductors
BSH104N-channel enhancement mode MOS transistorNXP Semiconductors
NXP Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск