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PDF BSH102 Data sheet ( Hoja de datos )
| Número de pieza | BSH102 | |
| Descripción | N-channel enhancement mode MOS transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH102
N-channel enhancement mode
MOS transistor
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC13b
1997 Dec 08
1 page  
Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH102
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
Ciss
Coss
Crss
QG
QGS
QGD
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
Switching times
td(on)
turn-on delay time
tf fall time
ton turn-on switching time
td(off)
turn-off delay time
tr rise time
toff turn-off switching time
Source-drain diode
VSD source-drain diode forward
voltage
trr reverse recovery time
CONDITIONS
VGS = 0; ID = 10 µA
VGS = VDS; ID = 1 mA
VGS = 0; VDS = 24 V
VGS = ±20 V; VDS = 0
VGS = 10 V; ID = 0.5 A
VGS = 4.5 V; ID = 0.25 A
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 10 V; VDD = 15 V;
ID = 0.5 A; Tamb = 25 °C
VDD = 15 V; ID = 0.5 A;
Tamb = 25 °C
VDD = 15 V; ID = 0.5 A;
Tamb = 25 °C
VGS = 0 to 10 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGS = 0 to 10 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGS = 0 to 10 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGD = 0; IS = 0.5 A
IS = 0.5 A; di/dt = −100 A/µs
MIN.
30
1
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
67
27
13
2290
MAX.
−
−
100
±100
0.4
0.6
−
−
−
−
UNIT
V
V
nA
nA
Ω
Ω
pF
pF
pF
pC
− 150 − pC
− 780 − pC
− 3.5 − ns
− 4 − ns
− 7.5 − ns
− 8 − ns
− 3 − ns
− 11 − ns
−−1V
− 25 − ns
1997 Dec 08
5
5 Page 
Philips Semiconductors
N-channel enhancement mode
MOS transistor
NOTES
Product specification
BSH102
1997 Dec 08
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BSH102.PDF ] | |
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