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BY229X PDF даташит

Спецификация BY229X изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Rectifier diodes fast/ soft-recovery».

Детали детали

Номер произв BY229X
Описание Rectifier diodes fast/ soft-recovery
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BY229X Даташит, Описание, Даташиты
Philips Semiconductors
Rectifier diodes
fast, soft-recovery
Product specification
BY229F, BY229X series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
k
1
QUICK REFERENCE DATA
VR = 200 V/ 400 V/ 600 V/800 V
a IF(AV) = 8 A
2 IFSM 60 A
trr 135 ns
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft
recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies.
The BY229F series is supplied in the conventional leaded SOD100 package.
The BY229X series is supplied in the conventional leaded SOD113 package.
PINNING
SOD100
SOD113
PIN DESCRIPTION
1 cathode
case
case
2 anode
tab isolated
12
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRSM
VRRM
VRWM
VR
Peak non-repetitive reverse
voltage
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
BY229F- / BY229X-
IF(AV)
IF(RMS)
IFRM
IFSM
I2t
Tstg
Tj
Average forward current1
RMS forward current
Peak repetitive forward current
Peak non-repetitive forward
current
I2t for fusing
Storage temperature
Operating junction temperature
square wave; δ = 0.5;
Ths 83 ˚C
sinusoidal; a = 1.57;
Ths 90 ˚C
t = 25 µs; δ = 0.5;
Ths 83 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 150 ˚C
prior to surge; with
reapplied VRWM(max)
t = 10 ms
1. Neglecting switching and reverse current losses.
-
-
-
-
-
-
-
-
-
-
-
-40
-
200 400 600 800
200 400 600 800
200 400 600 800
150 300 500 600
150 300 500 600
8
7
11
16
60
66
18
150
150
V
V
V
V
A
A
A
A
A
A
A2s
˚C
˚C
September 1998
1
Rev 1.200









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BY229X Даташит, Описание, Даташиты
Philips Semiconductors
Rectifier diodes
fast, soft-recovery
Product specification
BY229F, BY229X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol Peak isolation voltage from SOD100 package; R.H. 65%; clean and
both terminals to external dustfree
heatsink
Visol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
both terminals to external sinusoidal waveform; R.H. 65%; clean
heatsink
and dustfree
Cisol Capacitance from pin 1 to f = 1 MHz
external heatsink
MIN. TYP. MAX. UNIT
- - 1500 V
- - 2500 V
- 10 - pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
7.2
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF Forward voltage
IR Reverse current
CONDITIONS
IF = 20 A
VR = VRWM; Tj = 125 ˚C
MIN.
-
-
TYP. MAX. UNIT
1.5 1.85 V
0.1 0.4 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
trr
Qs
dIR/dt
Reverse recovery time
Reverse recovery charge
Maximum slope of the reverse
recovery current
CONDITIONS
IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs
IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs
IF = 2 A; -dIF/dt = 20 A/µs
MIN.
-
-
-
TYP.
100
0.5
50
MAX.
135
0.7
60
UNIT
ns
µC
A/µs
September 1998
2
Rev 1.200









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BY229X Даташит, Описание, Даташиты
Philips Semiconductors
Rectifier diodes
fast, soft-recovery
Product specification
BY229F, BY229X series
I
F
dI
F
dt
trr
time
Qs
I
R
I
rrm
25% 100%
Fig.1. Definition of trr, Qs and Irrm
PF / W
20
Vo = 1.25 V
Rs = 0.03 Ohms
15
BY329
Ths(max) / C
54
D = 1.0
0.5 78
10 0.2
0.1
102
5
I tp
D
=
tp
T
126
Tt
0 150
0 2 4 6 8 10 12
IF(AV) / A
Fig.2. Maximum forward dissipation, PF = f(IF(AV));
square wave current waveform; parameter D = duty
cycle = tp/T.
PF / W
15
Vo = 1.25 V
Rs = 0.03 Ohms
10
5
BY329
Ths(max) / C
78
a = 1.57
1.9
2.2
2.8
102
4
126
IFS(RMS) / A
80
BY229
70
IFSM
60
50
40
30
20
10
0
1ms
10ms
0.1s
tp / s
1s
10s
Fig.4. Maximum non-repetitive rms forward current.
IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior
to surge with reapplied VRWM.
IF / A
30
Tj = 150 C
Tj = 25 C
20
BY229F
10
typ max
0
0 0.5 1 1.5 2
VF / V
Fig.5. Typical and maximum forward characteristic;
IF = f(VF); parameter Tj
Qs / uC
10
Tj = 150 C
Tj = 25 C
1
BY329
IF = 10 A
10 A
2A
1A
2A
1A
0 150
02468
IF(AV) / A
Fig.3. Maximum forward dissipation, PF = f(IF(AV));
sinusoidal current waveform; parameter a = form
factor = IF(RMS)/IF(AV).
September 1998
3
0.1
1
10
-dIF/dt (A/us)
100
Fig.6. Maximum Qs at Tj = 25˚C and 150˚C
Rev 1.200










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