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BY229 PDF даташит

Спецификация BY229 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Rectifier diodes fast/ soft-recovery».

Детали детали

Номер произв BY229
Описание Rectifier diodes fast/ soft-recovery
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BY229 Даташит, Описание, Даташиты
Philips Semiconductors
Rectifier diodes
fast, soft-recovery
Product specification
BY229 series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
1
QUICK REFERENCE DATA
VR = 200 V/ 400 V/ 600 V/800 V
a IF(AV) = 8 A
2 IFSM 60 A
trr 135 ns
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diodes featuring low
forward voltage drop, fast reverse
recovery and soft recovery
characteristic. The devices are
intended for use in TV receivers,
monitors and switched mode power
supplies.
The BY229 series is supplied in the
conventional leaded SOD59
(TO220AC) package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
tab cathode
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRSM
VRRM
VRWM
VR
IF(AV)
IF(RMS)
IFRM
IFSM
I2t
Tstg
Tj
Peak non-repetitive reverse
voltage
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current1
RMS forward current
Repetitive peak forward current
Non-repetitive peak forward
current.
I2t for fusing
Storage temperature
Operating junction temperature
BY229
square wave;
δ = 0.5;
Tmb 122 ˚C
sinusoidal;
a = 1.57;
Tmb 125 ˚C
t = 25 µs; δ = 0.5;
Tmb 122 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal;
Tj = 150 ˚C prior to
surge; with
reapplied VRWM(max)
t = 10 ms
-
-
-
-
-
-
-
-
-
-
-
-40
-
-200
200
200
150
150
MAX.
-400 -600
400 600
400 600
300 500
300 500
8
7
11
16
60
66
18
150
150
-800
800
UNIT
V
800 V
600 V
600 V
A
A
A
A
A
A
A2s
˚C
˚C
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.200









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BY229 Даташит, Описание, Даташиты
Philips Semiconductors
Rectifier diodes
fast, soft-recovery
Product specification
BY229 series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
in free air.
MIN. TYP. MAX. UNIT
- - 2.0 K/W
- 60 - K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF Forward voltage
IR Reverse current
CONDITIONS
IF = 20 A
VR = VRWM; Tj = 125 ˚C
MIN.
-
-
TYP. MAX. UNIT
1.5 1.85 V
0.1 0.4 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
trr
Qs
dIR/dt
Reverse recovery time
Reverse recovery charge
Maximum slope of the reverse
recovery current
CONDITIONS
IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs
IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs
IF = 2 A; -dIF/dt = 20 A/µs
MIN.
-
-
-
TYP.
100
0.5
50
MAX.
135
0.7
60
UNIT
ns
µC
A/µs
September 1998
2
Rev 1.200









No Preview Available !

BY229 Даташит, Описание, Даташиты
Philips Semiconductors
Rectifier diodes
fast, soft-recovery
Product specification
BY229 series
I
F
dI
F
dt
trr
time
Qs
I
R
I
rrm
25% 100%
Fig.1. Definition of trr, Qs and Irrm
PF / W
20
Vo = 1.25 V
Rs = 0.03 Ohms
15
BY329
Tmb(max) / C
110
D = 1.0
0.5 120
0.2
10
0.1
130
5
I tp
D=
tp
T
140
Tt
0 150
0 2 4 6 8 10 12
IF(AV) / A
Fig.2. Maximum forward dissipation, PF = f(IF(AV));
square wave current waveform; parameter D = duty
cycle = tp/T.
PF / W
15
Vo = 1.25 V
Rs = 0.03 Ohms
10
5
BY329
Tmb(max) / C
120
a = 1.57
1.9
2.2
2.8
130
4
140
IFS(RMS) / A
80
BY229
70
IFSM
60
50
40
30
20
10
0
1ms
10ms
0.1s
tp / s
1s
10s
Fig.4. Maximum non-repetitive rms forward current.
IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior
to surge with reapplied VRWM.
IF / A
30
Tj = 150 C
Tj = 25 C
20
BY229F
10
typ max
0
0 0.5 1 1.5 2
VF / V
Fig.5. Typical and maximum forward characteristic;
IF = f(VF); parameter Tj
Qs / uC
10
Tj = 150 C
Tj = 25 C
1
BY329
IF = 10 A
10 A
2A
1A
2A
1A
0 150
02468
IF(AV) / A
Fig.3. Maximum forward dissipation, PF = f(IF(AV));
sinusoidal current waveform; parameter a = form
factor = IF(RMS)/IF(AV).
September 1998
3
0.1
1
10
-dIF/dt (A/us)
100
Fig.6. Maximum Qs at Tj = 25˚C and 150˚C
Rev 1.200










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