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BZA408B PDF даташит

Спецификация BZA408B изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Quadruple bidirectional ESD transient voltage suppressor».

Детали детали

Номер произв BZA408B
Описание Quadruple bidirectional ESD transient voltage suppressor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BZA408B Даташит, Описание, Даташиты
DATA SHEET
dbook, halfpage
M3D302
BZA408B
Quadruple bidirectional ESD
transient voltage suppressor
Product data sheet
Supersedes data of 1998 Jun 05
1998 Oct 15









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BZA408B Даташит, Описание, Даташиты
NXP Semiconductors
Quadruple bidirectional ESD transient
voltage suppressor
Product data sheet
BZA408B
FEATURES
ESD rating >15 kV, according to IEC1000-4-2
SOT457 surface mount package
Non-clamping range: 5 V to +5 V
Channel separation: >70 dB
Low reverse current: <100 nA
Low diode capacitance: <75 pF.
PINNING
PIN
1
2, 5
3
4
6
cathode 1
ground
cathode 2
cathode 3
cathode 4
DESCRIPTION
APPLICATIONS
Protection of equipment, connected to data and
transmission lines, against voltage surges caused by
electrostatic discharge e.g:
– Computers and peripherals
– Audio and video equipment
– Communication systems
– Medical equipment
– Portable electronics.
DESCRIPTION
4-bit wide monolithic bidirectional ESD transient voltage
suppressor in a six lead SOT457 (SC-74) package.
handbook, halfpage
654
654
1
Top view
2
3
12 3
MAM409
Marking code: Z8.
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode (pin 2 and / or 5 connected to ground)
IZSM
PZSM
Tstg
Tj
non-repetitive peak reverse current
non-repetitive peak power
storage temperature
junction temperature
tp = 1 ms; square pulse; see Fig.2
tp = 1 ms; square pulse
MIN.
65
65
MAX. UNIT
2
20
+150
+150
A
W
°C
°C
1998 Oct 15
2









No Preview Available !

BZA408B Даташит, Описание, Даташиты
NXP Semiconductors
Quadruple bidirectional ESD transient
voltage suppressor
Product data sheet
BZA408B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point one or more diodes loaded
VALUE
340
UNIT
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode (pin 2 and / or 5 connected to ground)
VRWM
VR
VZSM
IR
Cd
αch (p to p)
working reverse voltage
reverse voltage
non-repetitive peak reverse voltage
reverse current
diode capacitance
pin to pin channel separation
Itest = 5 mA
tp = 1 ms; IZSM = 2 A
VR = VRWM
see Fig.3
VR = 0; f = 1 MHz
VR = 5 V; f = 1 MHz
note 1; see Fig.4
5V
5.5
V
10 V
100 nA
75 pF
55 pF
70
dB
Note
1. αch (p to p) is measured as follows: a 7 dBs sinewave of 400 Hz is connected to e.g. pin 6 and a 7 dBs sinewave of
1 kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input
impedance of 1 M. So αch (p to p) equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz
signal the same measurement is done in the opposite way.
1998 Oct 15
3










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Номер в каталогеОписаниеПроизводители
BZA408BQuadruple bidirectional ESD transient voltage suppressorNXP Semiconductors
NXP Semiconductors

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