BZA408B PDF даташит
Спецификация BZA408B изготовлена «NXP Semiconductors» и имеет функцию, называемую «Quadruple bidirectional ESD transient voltage suppressor». |
|
Детали детали
Номер произв | BZA408B |
Описание | Quadruple bidirectional ESD transient voltage suppressor |
Производители | NXP Semiconductors |
логотип |
9 Pages
No Preview Available ! |
DATA SHEET
dbook, halfpage
M3D302
BZA408B
Quadruple bidirectional ESD
transient voltage suppressor
Product data sheet
Supersedes data of 1998 Jun 05
1998 Oct 15
No Preview Available ! |
NXP Semiconductors
Quadruple bidirectional ESD transient
voltage suppressor
Product data sheet
BZA408B
FEATURES
• ESD rating >15 kV, according to IEC1000-4-2
• SOT457 surface mount package
• Non-clamping range: −5 V to +5 V
• Channel separation: >70 dB
• Low reverse current: <100 nA
• Low diode capacitance: <75 pF.
PINNING
PIN
1
2, 5
3
4
6
cathode 1
ground
cathode 2
cathode 3
cathode 4
DESCRIPTION
APPLICATIONS
• Protection of equipment, connected to data and
transmission lines, against voltage surges caused by
electrostatic discharge e.g:
– Computers and peripherals
– Audio and video equipment
– Communication systems
– Medical equipment
– Portable electronics.
DESCRIPTION
4-bit wide monolithic bidirectional ESD transient voltage
suppressor in a six lead SOT457 (SC-74) package.
handbook, halfpage
654
654
1
Top view
2
3
12 3
MAM409
Marking code: Z8.
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode (pin 2 and / or 5 connected to ground)
IZSM
PZSM
Tstg
Tj
non-repetitive peak reverse current
non-repetitive peak power
storage temperature
junction temperature
tp = 1 ms; square pulse; see Fig.2
tp = 1 ms; square pulse
MIN.
−
−
−65
−65
MAX. UNIT
2
20
+150
+150
A
W
°C
°C
1998 Oct 15
2
No Preview Available ! |
NXP Semiconductors
Quadruple bidirectional ESD transient
voltage suppressor
Product data sheet
BZA408B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point one or more diodes loaded
VALUE
340
UNIT
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode (pin 2 and / or 5 connected to ground)
VRWM
VR
VZSM
IR
Cd
αch (p to p)
working reverse voltage
reverse voltage
non-repetitive peak reverse voltage
reverse current
diode capacitance
pin to pin channel separation
Itest = 5 mA
tp = 1 ms; IZSM = 2 A
VR = VRWM
see Fig.3
VR = 0; f = 1 MHz
VR = 5 V; f = 1 MHz
note 1; see Fig.4
−5V
5.5 −
V
− 10 V
− 100 nA
− 75 pF
− 55 pF
70 −
dB
Note
1. αch (p to p) is measured as follows: a −7 dBs sinewave of 400 Hz is connected to e.g. pin 6 and a −7 dBs sinewave of
1 kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input
impedance of 1 MΩ. So αch (p to p) equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz
signal the same measurement is done in the opposite way.
1998 Oct 15
3
Скачать PDF:
[ BZA408B.PDF Даташит ]
Номер в каталоге | Описание | Производители |
BZA408B | Quadruple bidirectional ESD transient voltage suppressor | NXP Semiconductors |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |