BZA109 PDF даташит
Спецификация BZA109 изготовлена «NXP Semiconductors» и имеет функцию, называемую «9-fold ESD transient voltage suppressor». |
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Детали детали
Номер произв | BZA109 |
Описание | 9-fold ESD transient voltage suppressor |
Производители | NXP Semiconductors |
логотип |
12 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D184
BZA109
9-fold ESD transient voltage
suppressor
Product specification
Supersedes data of 1997 Oct 27
File under Discrete Semiconductors, SC01
1997 Dec 01
No Preview Available ! |
Philips Semiconductors
9-fold ESD transient voltage suppressor
Product specification
BZA109
FEATURES
• ESD rating >8 kV, according to
IEC1000-4-2
• SOT163-1 surface mount package
• Common anode configuration
• Non-clamping range 0.5 to 6.8 V
• Maximum non-repetitive peak
reverse power dissipation: 25 W
at tp = 1 ms
• Maximum clamping voltage at peak
pulse current: 10 V at IZSM = 2.5 A.
APPLICATIONS
• For 9-bit wide undershoot/
overshoot clamping and fast ESD
transient suppression in:
– Computers and peripherals
– Audio and video equipment
– Business machines
– Communication systems
– Medical equipment.
DESCRIPTION
9-fold monolithic transient voltage
suppressor in an SO20; SOT163-1
surface mount package. The device is
ideal in situations where board space
is a premium.
PINNING
PIN DESCRIPTION
1 to 5 input (IN1 to IN5)
6 and 15 common anode (GND)
7 to 10 input (IN6 to IN9)
11 to 14 output (OUT9 to OUT6)
16 to 20 output (OUT5 to OUT1)
handbook, 4 columns
IN1 1
IN2 2
IN3 3
IN4 4
IN5 5
GND 6
SO20
IN6 7
IN7 8
IN8 9
IN9 10
20 OUT1
19 OUT2
18 OUT3
17 OUT4
16 OUT5
15 GND
14 OUT6
13 OUT7
12 OUT8
11 OUT9
20 19 18 17 16 15 14 13 12 11
1 2 3 4 5 6 7 8 9 10
MBK268
Fig.1 Pin configuration for SO20 (SOT163-1) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
IZ
IF
IFT
IFSM
IZSM
Ptot
PZSM
working current
continuous forward current
feed-through current
non-repetitive peak forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
Tstg storage temperature
Tj operating junction temperature
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C; note 1
tp = 1 ms; square pulse
tp = 1 ms; square pulse; see Fig.2
Tamb ≤ 25 °C; note 2; see Fig.3
tp = 1 ms; square pulse; see Fig.4
Notes
1. Current is flowing from input to corresponding output.
2. One or more diodes loaded.
MIN.
−
−
−
−
−
−
−
−65
−65
MAX. UNIT
20
100
100
4.5
2.5
1.25
25
+150
+150
mA
mA
mA
A
A
W
W
°C
°C
1997 Dec 01
2
No Preview Available ! |
Philips Semiconductors
9-fold ESD transient voltage suppressor
Product specification
BZA109
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
one or more diodes loaded
VALUE UNIT
100 K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per diode
VZ
VF
VZSM
IH
rdif
SZ
working voltage
forward voltage
non-repetitive peak reverse voltage
input high current
differential resistance
temperature coefficient of
working voltage
Cd diode capacitance
IZ = 250 µA
IF = 100 mA
IZSM = 2.5 A; tp = 1 ms
VIN = 5.25 V
IZ = 250 µA
IZ = 5 mA
see Fig.5
VR = 0; f = 1 MHz
VR = 5.25 V; f = 1 MHz
MIN.
6.4
−
−
−
−
−
−
−
TYP.
6.8
−
−
−
−
3
−
−
MAX. UNIT
7.2 V
1.1 V
10 V
0.5 µA
100 Ω
− mV/K
200 pF
100 pF
1997 Dec 01
3
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