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PDF MMBTA42 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA42 | |
| Descripción | General Purpose NPN Silicon Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
MMBTA42
NPN Silicon
General Purpose Transistor
FEATURES
· Plastic-Encapsulate Transistors
· Power dissipation & Collector current
Pcm: 0.3W Icm: 0.3A
· High voltage V(BR): 300V
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
A
L
3
Top View
12
BS
VG
C
D HK
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
J All Dimension in mm
č ¥ ĎELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
300
Collector-emitter breakdown voltage
V(BR)CEO Ic= 1 m A IB=0
300
Emitter-base breakdown voltage
V(BR)EBO IE= 100 A IC=0
5
Collector cut-off current
ICBO VCB=200 V , IE=0
Emitter cut-off current
IEBO
HFE 1
VEB= 5V , IC=0
VCE= 10V, IC= 1mA
60
DC current gain
HFE 2
VCE= 10V, IC=10mA
100
HFE 3
VCE=10V, IC=30mA
60
Collector-emitter saturation voltage
VCE(sat) IC=20 mA, IB= 2m A
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC= 20 m A, IB=2m A
VCE= 20V, IC= 10mA
fT
f=30MHz
50
MAX UNIT
V
V
V
0.25
A
0.1 A
200
0.2 V
0.9 V
MHz
DEVICE MARKING
MMBTA42=1D
http://www.SeCoSGmbH.com
01-June-2004 Rev. B
Any changing of specification will not be informed individual
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| PDF Descargar | [ Datasheet MMBTA42.PDF ] | |
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