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K0443LG650 PDF даташит

Спецификация K0443LG650 изготовлена ​​​​«IXYS» и имеет функцию, называемую «Medium Voltage Thyristor».

Детали детали

Номер произв K0443LG650
Описание Medium Voltage Thyristor
Производители IXYS
логотип IXYS логотип 

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K0443LG650 Даташит, Описание, Даташиты
WESTCODE
An IXYS Company
Date:- 19 July, 2008
Data Sheet Issue:- 1
Medium Voltage Thyristor
Type K0443L#600 to K0443L#650
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current
repetitive, 50Hz, 60s
non-repetitive
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 115°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=115°C.
MAXIMUM
LIMITS
6000-6500
6000-6500
6000-6500
6100-6600
MAXIMUM
LIMITS
443
286
178
890
801
4800
5300
115×103
140×103
150
300
5
2
30
-40 to +115
-40 to +150
UNITS
V
V
V
V
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Types K0443L#600 to K0443L#650 Issue 1
Page 1 of 11
July, 2008









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K0443LG650 Даташит, Описание, Даташиты
WESTCODE An IXYS Company
Characteristics
Medium Voltage Thyristor Types K0443L#600 to K0443L#650
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
Vtr On-state recovery voltage
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate-controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% chord
Irm Reverse recovery current
trr Reverse recovery time, 50% chord
tq Turn-off time
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
9.0
-
-
-
-
0.6
6.0
3100
2100
130
30
800
1100
-
-
-
340
2.80
4.83
1.568
ITM=500A
ITM=1350A
2.428
- VD=80% VDRM, linear ramp, gate o/c
50 Rated VDRM
50 Rated VRRM
- IT=2×IT(AV)M, tp=10ms, Tcase=25°C
3.0
300 Tj=25°C.
VD=10V, IT=3A
0.25
1000
1.2
9.0
Rated VDRM
Tj=25°C
VD=67% VDRM, IT=1000A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
3875
- ITM=1000A, tp=1000µs, di/dt=10A/µs,
- Vr=50V
-
-
-
0.032
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
Double side cooled
0.064 Single side cooled
20
-
UNITS
V
V
V
m
V/µs
mA
mA
V
V
mA
V
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=115°C.
2) For other clamp forces consult factory.
Data Sheet. Types K0443L#600 to K0443L#650 Issue 1
Page 2 of 11
July, 2008









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K0443LG650 Даташит, Описание, Даташиты
WESTCODE An IXYS Company
Medium Voltage Thyristor Types K0443L#600 to K0443L#650
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
60
62
64
65
VDRM VDSM VRRM
V
6000
6200
6400
6500
VRSM
V
6100
6300
6500
6600
VD VR
DC V
3000
3100
3200
3250
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
6.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
Data Sheet. Types K0443L#600 to K0443L#650 Issue 1
Page 3 of 11
July, 2008










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