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CS19-12ho1S PDF даташит

Спецификация CS19-12ho1S изготовлена ​​​​«IXYS» и имеет функцию, называемую «High Efficiency Thyristor».

Детали детали

Номер произв CS19-12ho1S
Описание High Efficiency Thyristor
Производители IXYS
логотип IXYS логотип 

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CS19-12ho1S Даташит, Описание, Даташиты
High Efficiency Thyristor
Single Thyristor
Part number
CS19-12ho1S
CS19-12ho1S
VRRM = 1200 V
I TAV
=
20 A
VT = 1.31 V
4/2 1
3
Backside: anode
Features / Advantages:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Applications:
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Package: TO-263 (D2Pak)
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b









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CS19-12ho1S Даташит, Описание, Даташиты
CS19-12ho1S
Thyristor
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I T(RMS)
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1200 V
VR/D = 1200 V
forward voltage drop
IT = 20 A
I T = 40 A
IT = 20 A
I T = 40 A
average forward current
TC = 110°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
min.
TVJ = 125 °C
TVJ = 125°C
TVJ = 125°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 230 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 125°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 125°C
VR = 0 V
TVJ = 25°C
TC = 125°C
TVJ = 150 °C; f = 50 Hz
repetitive, IT = 60 A
tP = 200 µs; diG /dt =0.15 A/µs;
IG = 0.15 A; V = VDRM
non-repet., IT = 20 A
V = VDRM
TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 150°C
t p = 10 µs
TVJ = 25 °C
IG = 0.1 A; diG/dt = 0.1 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.1 A; diG/dt = 0.1 A/µs
VR = 100 V; IT = 20 A; V = VDRM TVJ =100 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
typ. max. Unit
1300 V
1200 V
50 µA
1 mA
1.32 V
1.65 V
1.31 V
1.73 V
20 A
31 A
0.86 V
22 m
0.7 K/W
0.50 K/W
170 W
180 A
195 A
155 A
165 A
160 A²s
160 A²s
120 A²s
115 A²s
9 pF
5W
2.5 W
0.5 W
150 A/µs
500 A/µs
500 V/µs
1.5 V
2.5 V
28 mA
50 mA
0.2 V
3 mA
75 mA
50 mA
2 µs
150 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b









No Preview Available !

CS19-12ho1S Даташит, Описание, Даташиты
Package TO-263 (D2Pak)
Symbol
I RMS
TVJ
Top
Tstg
Weight
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
FC mounting force with clip
Product Marking
Part No.
Logo
Assembly Line
Date Code
Assembly Code
XXXXXXXXX
IXYS Zyyww
000000
Conditions
per terminal
CS19-12ho1S
Ratings
min. typ. max. Unit
35 A
-40 125 °C
-40 100 °C
-40 150 °C
2g
20 60 N
Ordering
Standard
Alternative
Ordering Number
CS19-12ho1S
CS19-12ho1S-TUB
Similar Part
CS19-12ho1
CS19-08ho1
CS19-08ho1S
Marking on Product
CS19-12ho1S
CS19-12ho1S
Delivery Mode
Tape & Reel
Tube
Quantity Code No.
800 501313
50 473340
Package
TO-220AB (3)
TO-220AB (3)
TO-263AB (D2Pak) (2)
Voltage class
1200
800
800
Equivalent Circuits for Simulation
I V0
R0
Thyristor
V 0 max
R0 max
threshold voltage
slope resistance *
0.86
19
* on die level
T VJ = 125 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b










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Номер в каталогеОписаниеПроизводители
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CS19-12ho1SHigh Efficiency ThyristorIXYS
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