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PDF CS19-08ho1S Data sheet ( Hoja de datos )
| Número de pieza | CS19-08ho1S | |
| Descripción | High Efficiency Thyristor | |
| Fabricantes | IXYS | |
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High Efficiency Thyristor
Single Thyristor
Part number
CS19-08ho1S
CS19-08ho1S
VRRM
I TAV
VT
=
=
=
800 V
20 A
1.31 V
4/2 1
3
Backside: anode
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
1 page  
CS19-08ho1S
Thyristor
60
160
50 Hz, 80% VRRM
140
40
IT
[A]
20
125°C
150°C
TVJ = 25°C
0
0,5 1,0 1,5 2,0 2,5
VT [V]
Fig. 1 Forward characteristics
120
ITSM
100
[A]
80
TVJ = 45°C
TVJ = 125°C
60
0,01
0,1
t [s]
1
Fig. 2 Surge overload current
1000
VR = 0 V
I2t
100
[A2s]
TVJ = 45°C
TVJ = 125°C
10
1 2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time (1-10 ms)
100
1: IGD, TVJ = 150°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
10
VG
[V]
1
3
2
1
1000
6
5
4
100
tgd
[µs]
10
typ. Limit
TVJ = 125°C
40
30
IT(AV)M
20
[A]
10
dc =
1
0.5
0.4
0.33
0.17
0.08
0,1 IGD, TVJ = 125°C
1 10
4: PGAV = 0.5 W
5: PGM = 2.5 W
6: PGM = 5 W
100 1000
IG [mA]
1
10
100
IG [mA]
1000
0
0 25 50 75 100 125 150 175
TC [°C]
Fig. 4 Gate trigger characteristics
Fig. 5 Gate controlled delay time
Fig. 6 Max. forward current
at case temperature
40
30
P(AV)
20
dc =
1
0.5
0.4
0.33
0.17
0.08
[W]
10
RthHA
0.6
0.8
1.0
2.0
4.0
8.0
0
0 10 20 0 50 100 150
IT(AV) [A]
Tamb [°C]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0,8
0,6
ZthJC
0,4
[K/W]
0,2
0,0
100
Rthi [K/W] ti [s]
0.10 0.01
0.08 0.0011
0.18 0.025
0.17 0.32
0.17 0.09
101 102 103
t [ms]
104
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CS19-08ho1S.PDF ] | |
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