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PDF CS22-08io1M Data sheet ( Hoja de datos )
| Número de pieza | CS22-08io1M | |
| Descripción | High Efficiency Thyristor | |
| Fabricantes | IXYS | |
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High Efficiency Thyristor
Single Thyristor
Part number
CS22-08io1M
CS22-08io1M
VRRM
I TAV
VT
=
=
=
800 V
16 A
1.27 V
21
3
Backside: isolated
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: TO-220FP
● Isolation Voltage: 2500 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
1 page  
CS22-08io1M
Thyristor
60
50
40
IT
30
[A]
20
10
TVJ = 150°C
125°C
TVJ = 25°C
0
0,5 1,0 1,5 2,0
VT [V]
Fig. 1 Forward characteristics
280
240
ITSM
200
[A]
160
120
50 Hz, 80% VRRM
TVJ = 45°C
TVJ = 125°C
1000
VR = 0 V
I2t
[A2s]
TVJ = 45°C
TVJ = 125°C
100
80
0,001
0,01
0,1
1
t [s]
Fig. 2 Surge overload current
ITSM: crest value, t: duration
1 2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time (1-10 s)
4
IGD: TVJ = 125°C
B
3B
VG
2
[V]
B
C
102
101
tgd
[µs]
100
TVJ = 125°C
lim.
30
25
20
IT(AV)M
15
[A]
10
180° sine
1
IGD: TVJ = 25°C
typ. 5
A
0 10-1
0 25 50 75
10-2
10-1
100
101
IG [mA]
IG [A]
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
Fig. 5 Gate controlled delay time tgd
0
0 25 50 75 100 125 150 175
Tcase [°C]
Fig. 6 Max. forward current at
case temperature
24
20
16
P(AV)
dc =
1
0.5
0.4
0.33
0.17
0.08
12
[W]
8
4
RthHA
0.6
0.8
1.0
2.0
4.0
8.0
3
ZthJC
2
i Rthi (K/W)
1 0.015
2 0.124
3 0.395
4 1.606
5 0.86
ti (s)
0.0011
0.0019
0.07
1.1
4.9
[K/W]
1
0
0 5 10 15 20 0
IT(AV) [A]
50 100
Tamb [°C]
150
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0
0,001
0,01
0,1 1
t [s]
10 100
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CS22-08io1M.PDF ] | |
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