XP05534 PDF даташит
Спецификация XP05534 изготовлена «Panasonic Semiconductor» и имеет функцию, называемую «Silicon NPN epitaxial planar type Transistors». |
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Детали детали
Номер произв | XP05534 |
Описание | Silicon NPN epitaxial planar type Transistors |
Производители | Panasonic Semiconductor |
логотип |
4 Pages
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Composite Transistors
XP05534
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• High transition frequency fT
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SC2404 × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
30
20
3
15
150
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
0.2±0.05
65
4
1 23
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
Unit: mm
0.12+–00..0025
1: Emitter (Tr1)
2: Base (Tr1)
3: Base (Tr2)
EIAJ: SC-88
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
Marking Symbol: IS
Internal Connection
65
4
Tr1 Tr2
123
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 V
Base-emitter voltage
VBE VCB = 6 V, IE = −1 mA
720 mV
Forward current transfer ratio
hFE VCB = 6 V, IE = −1 mA
40
Transition frequency
fT VCB = 6 V, IE = −1 mA, f = 100 MHz 450 650
MHz
Reverse transfer capacitance
(Common emitter)
Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz
0.8 1.0
pF
Power gain
Noise figure
GP VCB = 6 V, IE = −1 mA, f = 100 MHz
NF VCB = 6 V, IE = −1 mA, f = 100 MHz
24
3.3
dB
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJJ00192AED
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XP05534
PT Ta
250
200
150
100
50
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
12
Ta = 25°C
10 IB = 100 µA
80 µA
8
60 µA
6
40 µA
4
20 µA
2
0
0 4 8 12 16
Collector-emitter voltage VCE (V)
IC IB
12
VCE = 6 V
Ta = 25°C
10
8
6
4
2
0
0 40 80 120 160
Base current IB (µA)
IC VBE
30
VCE = 6 V
25°C
25
Ta = 75°C −25°C
20
15
10
5
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
25°C Ta = 75°C
0.1
−25°C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
360
VCE = 6 V
300
240
180 Ta = 75°C
25°C
120 −25°C
60
0
0.1 1 10 100
Collector current IC (mA)
fT IE
1 200
VCB = 6 V
Ta = 25°C
1 000
800
600
400
200
0
− 0.1
−1
−10 −100
Emitter current IE (mA)
Cre VCE
2.4 IC = 1 mA
f = 10.7 MHz
Ta = 25°C
2.0
1.6
1.2
0.8
0.4
0
0.1 1 10 100
Collector-emitter voltage VCE (V)
Cob VCB
1.2 IE = 0
f = 1 MHz
1.0 Ta = 25°C
0.8
0.6
0.4
0.2
0
0 5 10 15 20 25 30
Collector-base voltage VCB (V)
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GP IE
40
f = 100 MHz
35
Rg = 50 Ω
Ta = 25°C
30
VCE = 10 V
25 6 V
20
15
10
5
0
− 0.1
−1
−10 −100
Emitter current IE (mA)
XP05534
NF IE
12 f = 100 MHz
Rg = 50 kΩ
10 Ta = 25°C
8
6
4 VCE = 6 V, 10 V
2
0
− 0.1
−1
−10 −100
Emitter current IE (mA)
bie gie
20 yie = gie + jbie
18 VCE = 10 V
−4 mA
16
14
−2 mA
100
12
10 −1 mA
58
150
−7 mA
100
8
58
6
25
4 25
2
f = 10.7 MHz
0
0 3 6 9 12 15
Input conductance gie (mS)
bre gre
0
yre = gre + jbre
VCE = 10 V
−1
10.7
25
−4 mA
−2 −1 mA
58
−3 IE = −7 mA
−4 100
−5
f = 150 MHz
−6
− 0.5 − 0.4 − 0.3 − 0.2 − 0.1
0
Reverse transfer conductance gre (mS)
bfe gfe
0 10.7
58
−1 mA 100
−20
150
−2 mA
−40 −4 mA 150 100
−60 f = 150 MHz
IE = −7 mA
−80
100
58
−100
−120
0
yfe = gfe + jbfe
VCE = 10 V
20 40 60 80 100
Forward transfer conductance gfe (mS)
boe goe
1.2
150
−2 mA
1.0
−4 mA
100
0.8
−7 mA
0.6
58
0.4
25
0.2
0
0
f = 10.7 MHz
0.1 0.2
yoe = goe + jboe
VCE = 10 V
0.3 0.4 0.5
Output conductance goe (mS)
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