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PDF 2SC1959 Data sheet ( Hoja de datos )
| Número de pieza | 2SC1959 | |
| Descripción | NPN Transistor | |
| Fabricantes | JCET | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC1959 TRANSISTOR (NPN)
TO-92
FEATURES
z Excellent hFE Linearlity
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
35
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC Collector Current –Continuous
0.5
A
PC Collector Power Dissipation
500
mW
TJ Junction Temperature
Tstg Storage Temperature
150
-55-150
℃
℃
1.EMITTER
2. COLLECTOR
3. BSAE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO
IC= 100µA, IE=0
35
Collector-emitter breakdown voltage V(BR)CEO
IC= 1mA , IB=0
30
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
5
Collector cut-off current
ICBO
VCB= 35V, IE=0
Emitter cut-off current
IEBO
VEB= 5 V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=1 V, IC= 100mA
VCE=6 V, IC= 400mA
70
25
Collector-emitter saturation voltage
VCE(sat)
IC= 100mA, IB= 10mA
Base-emitter voltage
VBE VCE= 1V, IC= 100mA
Transition frequency
f T VCE= 6V, IC=20mA
Collector output capacitance
Cob VCB=6V,IE=0,f=1MHz
Typ
300
7
Max Unit
V
V
V
0.1 µA
0.1 µA
400
0.25 V
1.0 V
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
hFE(1)
hFE(2)
O
70-140
25(min)
Y
120-240
40(min)
GR
200-400
B,Sep,2012
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC1959.PDF ] | |
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