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2SC1815 PDF даташит

Спецификация 2SC1815 изготовлена ​​​​«JCET» и имеет функцию, называемую «NPN Transistor».

Детали детали

Номер произв 2SC1815
Описание NPN Transistor
Производители JCET
логотип JCET логотип 

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2SC1815 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SC1815 TRANSISTOR (NPN)
FEATURES
Power dissipation
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
RθJA
Tj
Tstg
Thermal Resistance from Junction
to Ambient
Junction Temperature
Storage Temperature
Value
60
50
5
150
400
312
150
-55~+150
Unit
V
V
V
mA
mW
/W
TO-92
1.EMITTER
2.COLLECTOR
3.BASE
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Noise Figure
Symbol
Test conditions
V(BR)CBO
IC==100uA, IE 0
V(BR)CEO
IC==0. 1mA, IB 0
V(BR)EBO
IE== 100uA, IC 0
ICBO =VCB= 60V,IE 0
ICEO =VCE= 50V, IB 0
IEBO =VEB=5V,IC 0
hFE VCE= 6 V, IC= 2mA
VCE(sat)
IC=10=0mA, IB 10mA
VBE(sat)
fT
Cob
NF
IC=10=0mA, IB 10mA
VCE=10 V, IC= 1mA
f=30MHz
VCB=10V,IE=0
f=1MHz
VCE=6V,IC=0.1mA
f =1KHz,RG=10K
Min
60
50
5
70
80
Typ Max
0.1
0.1
0.1
700
0.25
1
3.5
10
Unit
V
V
V
uA
uA
uA
V
V
MHz
pF
dB
CLASSIFICATION OF hFE
Rank
O
Range
70-140
Y
120-240
GR
200-400
BL
350-700
A,Nov,2012









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2SC1815 Даташит, Описание, Даташиты
Typical Characteristics
0.012
0.010
0.008
0.006
0.004
0.002
0.000
0
1
0.3
Static Characteristic
60uA
COMMON EMITTER
Ta=25
54uA
48uA
42uA
36uA
30uA
24uA
18uA
12uA
IB=6uA
2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
12
VCEsat —— IC
β=10
1000
100
10
0.2
2
1
0.1
0.03
0.01
0.1
150
100
Ta=100
Ta=25
1 10
COLLECTOR CURRENT IC (mA)
IC —— VBE
100 150
10
0.1
0.1
20
10
2SC1815
hFE —— IC
COMMON EMITTER
VCE=6V
Ta=100
Ta=25
1 10
COLLECTOR CURRENT IC (mA)
VBEsat —— IC
100 150
β=10
Ta=25
Ta=100
1 10
COLLECTOR CURRENT IC (mA)
Cob/ Cib —— VCB/ VEB
Cib
100 150
f=1MHz
IE=0/ IC=0
Ta=25
1
0.1
0.0
1000
COMMON EMITTER
VCE=6V
0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
fT —— IC
COMMON EMITTER
VCE=10V
Ta=25
100
10
0.4
1
3
10 30
COLLECTOR CURRENT IC (mA)
100
Cob
1
0.2
500
1
REVERSE VOLTAGE V (V)
PC —— Ta
10
20
400
300
200
100
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ()
A,Nov,2012










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