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Datasheet 2SB772 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SB772 | PNP Power Transistor 2SB772
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio frequency power amplifier and low speed switching applications
SOT-23
1．BASE 2．EMITTER 3．COLLECTOR
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitt |  BLUECOLOUR | transistor |
| 2 | 2SB772 | PNP EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SB772
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maxim |  DC COMPONENTS | transistor |
| 3 | 2SB772 | MEDIUM POWER LOW VOLTAGE TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SB772
PNP SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
FEATURES
* High current output up to 3A * Low sat |  Unisonic Technologies | transistor |
| 4 | 2SB772 | PNP SILICON POWER TRANSISTOR
DATA SHEET
PNP SILICON POWER TRANSISTOR
2SB772
PNP SILICON POWER TRANSISTOR
DESCRIPTION
The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.
PACKAGE DRAWING (Unit: mm)
8.5 MAX. 3.2 ±0. |  NEC | transistor |
| 5 | 2SB772 | PNP MEDIUM POWER TRANSISTOR 2SB772
PNP medium power transistor
Features
■ High current ■ Low saturation voltage ■ Complement to 2SD882
Applications
■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter
Description
The device is a PNP transistor manufactured by using pla |  ST Microelectronics | transistor |
2SB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur  Silan Microelectronics transistor | | |
| 2 | 2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H Silan Microelectronics transistor | | |
| 3 | 2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su Silan Microelectronics transistor | | |
| 4 | 2SB0709A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and th  Panasonic Semiconductor transistor | | |
| 5 | 2SB0710 | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 6 | 2SB0710A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 7 | 2SB0766 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | |
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