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PDF 2SB709A Data sheet ( Hoja de datos )
| Número de pieza | 2SB709A | |
| Descripción | PNP Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SB709A
-0.2A , -45V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
For general amplification
Complementary of the 2SD601A
CLASSIFICATION OF hFE
Product-Rank 2SB709A-Q
Range
160~260
Marking
BQ1
2SB709A-R
210~340
BR1
2SB709A-S
290~460
BS1
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
SOT-23
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-45
-45
-7
-100
200
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max. Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
VCE(sat)
hFE
fT
Cob
-45
-45
-7
-
-
-
160
60
-
- -V
- -V
- -V
- -0.1 μA
-
-100
μA
- -0.5 V
- 460
- - MHz
- 2.7 pF
Test Conditions
IC= -10μA, IE=0
IC= -2mA, IB=0
IE= -10μA, IC=0
VCB= -20V, IE=0
VCE= -10V, IB=0
IC= -100mA, IB= -10mA
VCE= -10V, IC= -2mA
VCE= -10V, IC= -1mA, f=200MHz
VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
21-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
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