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Datasheet 2SB624 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SB624 | Silicon PNP transistor 2SB624
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
高 hFE,与 2SD596 互补。 High hFE, complementary pair with 2SD596.
用途 / Applications
用于音频放大。 Aud |  BLUE ROCKET ELECTRONICS | transistor |
| 2 | 2SB624 | PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente
2SB624
-0.7A , -30V PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain. hFE：200 (Typ.) (VCE= -1V, IC= -100mA) Complimentary to 2SD596
MARKING
Product-Rank 2SB624-B |  SeCoS | transistor |
| 3 | 2SB624 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SB624 TRANSISTOR (PNP)
FEATURES
z High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) z Complimentary to 2SD596.
SOT-23
1.BASE 2.EMITTER 3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symb |  JCET | transistor |
| 4 | 2SB624 | SILICON PNP TRANSISTOR 2SB624(3CG624)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频放大。
Purpose: Audio frequency amplifier application .
特点:高 hFE,与 2SD596(3DG596M)互补。
Features: High hFE, complementary pair with 2SD596(3DG596M).
极限参数/Absolute Maximum Ratings(Ta=25℃)
|  LZG | transistor |
| 5 | 2SB624 | PNP Transistor Transys
Electronics
LIMITED
SOT-23-3L Plastic-Encapsulated Transistors
2SB624 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
0.2 W (Tamb=25℃)
Collector current
ICM: -0.7 Collector-base voltage
A
V(BR)CBO:
-30 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +15 |  TRANSYS | transistor |
2SB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur  Silan Microelectronics transistor | | |
| 2 | 2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H Silan Microelectronics transistor | | |
| 3 | 2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su Silan Microelectronics transistor | | |
| 4 | 2SB0709A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and th  Panasonic Semiconductor transistor | | |
| 5 | 2SB0710 | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 6 | 2SB0710A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 7 | 2SB0766 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | |
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