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2SB1198KFRA PDF даташит

Спецификация 2SB1198KFRA изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Power Transistor».

Детали детали

Номер произв 2SB1198KFRA
Описание Power Transistor
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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2SB1198KFRA Даташит, Описание, Даташиты
2SB1198K FRA
Power Transistor (-80V, -500mA)
Parameter
VCEO
IC
Value
-80V
-500mA
lFeatures
1)Low VCE(sat)
  VCE(sat)=-200mV(Typ.)
  (IC/IB=-500mA/-50mA)
2)High breakdown voltage.
  BVCEO=-80V
3)Complements the 2SD1782K FRA.
lOutline
  SOT-346
  SC-59
SMT3
lInner circuit
Datasheet
AEC-Q101 Qualified
 
 
 
 
 
lApplication
DRIVER
lPackaging specifications
Part No.
Package
SOT-346
2SB1198K FRA
(SMT3)
Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
2928 T146 180
8
3000
AK
                                                                                        
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© 2016 ROHM Co., Ltd. All rights reserved.
1/6
20160909 - Rev.001









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2SB1198KFRA Даташит, Описание, Даташиты
2SB1198K FRA
          
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
-80
-80
-5
-500
200
150
-55 to +150
Unit
V
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = -50μA
-80 -
-
Collector-emitter breakdown
voltage
BVCEO IC = -2mA
-80 -
-
Emitter-base breakdown voltage BVEBO IE = -50μA
-5 -
-
Collector cut-off current
ICBO VCB = -50V
- - -500
Emitter cut-off current
IEBO VEB = -4V
- - -500
Collector-emitter saturation voltage VCE(sat) IC = -500mA, IB = -50mA - -200 -500
DC current gain
hFE*2 VCE = -3V, IC = -100mA 120 - 390
Transition frequency
f
*2
T
VCE = -10V, IE = 50mA,
f = 100MHz
-
180
-
Unit
V
V
V
nA
nA
mV
-
MHz
Output capacitance
Cob
VCB = -10V, IE = 0A,
f = 1MHz
- 11 - pF
hFE values are calssified as follows :
rank Q
R
-
-
-
hFE
120-270
180-390
-
-
-
*1 Each terminal mounted on a reference land.
*2 Pulsed
                                            
 
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/6
                                        
20160909 - Rev.001









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2SB1198KFRA Даташит, Описание, Даташиты
2SB1198K FRA
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Grounded emitter propagation
    characteristics
      Datasheet
Fig.2 Grounded emitter output
    characteristics
Fig.3 DC current gain vs.collector current
Fig.4 Collector-emitter saturation voltage
    vs. collector current (I)
                                                                                          
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/6
20160909 - Rev.001










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Номер в каталогеОписаниеПроизводители
2SB1198KFRAPower TransistorROHM Semiconductor
ROHM Semiconductor

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