2SB1198KFRA PDF даташит
Спецификация 2SB1198KFRA изготовлена «ROHM Semiconductor» и имеет функцию, называемую «Power Transistor». |
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Детали детали
Номер произв | 2SB1198KFRA |
Описание | Power Transistor |
Производители | ROHM Semiconductor |
логотип |
8 Pages
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2SB1198K FRA
Power Transistor (-80V, -500mA)
Parameter
VCEO
IC
Value
-80V
-500mA
lFeatures
1)Low VCE(sat)
VCE(sat)=-200mV(Typ.)
(IC/IB=-500mA/-50mA)
2)High breakdown voltage.
BVCEO=-80V
3)Complements the 2SD1782K FRA.
lOutline
SOT-346
SC-59
SMT3
lInner circuit
Datasheet
AEC-Q101 Qualified
lApplication
DRIVER
lPackaging specifications
Part No.
Package
SOT-346
2SB1198K FRA
(SMT3)
Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
2928 T146 180
8
3000
AK
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© 2016 ROHM Co., Ltd. All rights reserved.
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20160909 - Rev.001
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2SB1198K FRA
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
-80
-80
-5
-500
200
150
-55 to +150
Unit
V
V
V
mA
mW
℃
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = -50μA
-80 -
-
Collector-emitter breakdown
voltage
BVCEO IC = -2mA
-80 -
-
Emitter-base breakdown voltage BVEBO IE = -50μA
-5 -
-
Collector cut-off current
ICBO VCB = -50V
- - -500
Emitter cut-off current
IEBO VEB = -4V
- - -500
Collector-emitter saturation voltage VCE(sat) IC = -500mA, IB = -50mA - -200 -500
DC current gain
hFE*2 VCE = -3V, IC = -100mA 120 - 390
Transition frequency
f
*2
T
VCE = -10V, IE = 50mA,
f = 100MHz
-
180
-
Unit
V
V
V
nA
nA
mV
-
MHz
Output capacitance
Cob
VCB = -10V, IE = 0A,
f = 1MHz
- 11 - pF
hFE values are calssified as follows :
rank Q
R
-
-
-
hFE
120-270
180-390
-
-
-
*1 Each terminal mounted on a reference land.
*2 Pulsed
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/6
20160909 - Rev.001
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2SB1198K FRA
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Grounded emitter propagation
characteristics
Datasheet
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.collector current
Fig.4 Collector-emitter saturation voltage
vs. collector current (I)
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© 2015 ROHM Co., Ltd. All rights reserved.
3/6
20160909 - Rev.001
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Номер в каталоге | Описание | Производители |
2SB1198KFRA | Power Transistor | ROHM Semiconductor |
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