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Datasheet 2SB1198K Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SB1198K | Silicon PNP transistor 2SB1198K
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
击穿电压高,饱和压降低,与 2SD1782K 互补。 High breakdown, low VCE(sat),complements the 2SD1782K.
用途 | BLUE ROCKET ELECTRONICS | transistor |
2 | 2SB1198K | PNP Transistor 2SB1198K
SOT-23-3L Transistor(PNP)
1. BASE 2. EMITTER 3. COLLECTOR
Features
Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter C | DXC | transistor |
3 | 2SB1198K | PNP Transistors SMD Type
Transistors
PNP Transistors 2SB1198K
■ Features
● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-80V ● Complementary to 2SD1782K
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.2
+0.21.6 -0.1
0.55 0.4
Unit: mm 0.15 +0 | Kexin | transistor |
4 | 2SB1198K | SILICON PNP TRANSISTOR 2SB1198K(3CG1198K)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于一般中功率放大。
Purpose: Medium power amplifier applications.
特点:击穿电压高,饱和压降低,与 2SD1782K(3DG1782K)互补。
Features: High breakdown,low VCE(sat),complements the 2SD1782K(3DG1782 | LZG | transistor |
5 | 2SB1198K | Low-frequency Transistor(-80V/ -0.5A) Transistors
Low-frequency Transistor (*80V, *0.5A)
2SB1198K
FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm)
FAb | ROHM Semiconductor | transistor |
2SB Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur Silan Microelectronics transistor | | |
2 | 2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H Silan Microelectronics transistor | | |
3 | 2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su Silan Microelectronics transistor | | |
4 | 2SB0709A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and th Panasonic Semiconductor transistor | | |
5 | 2SB0710 | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
6 | 2SB0710A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
7 | 2SB0766 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | |
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