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2SB1197 PDF даташит

Спецификация 2SB1197 изготовлена ​​​​«Kexin» и имеет функцию, называемую «PNP Transistors».

Детали детали

Номер произв 2SB1197
Описание PNP Transistors
Производители Kexin
логотип Kexin логотип 

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2SB1197 Даташит, Описание, Даташиты
SMD Type
SMD Type
PNP Transistors
2SB1197 (2SB1197K)
Transistors
Features
Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA .
IC = -0.8A.
PNP silicon transistor
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector current
Collector power dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-40
-32
-5
-0.8
0.2
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltag
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Output Capacitance
Transition frequency
Symbol
Test Conditions
VCBO IC = -50 A
V CEO IC = -1mA
VEBO IE = -50 A
ICBO VCB = -20V
IEBO VEB = -4V
VCE(sat) IC = -0.5A , IB = -50mA
hFE VCE = -3V , IC = -100mA
Cob VCB = -10V , IE = 0A , f = 1MHz
f T VCE = -5V , IE = 50mA , f = 100MHz
hFE Classification
Type
Range
Marking
2SB1197/K-Q
120-270
AHQ
2SB1197/K-R
180-390
AHR
Min Typ Max Unit
-40 V
-32 V
-5 V
-0.5 A
-0.5 A
-0.5 V
120 390
12 30 pF
200 MHz
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2SB1197 Даташит, Описание, Даташиты
SMD Type
Transistors
Ƶ Typical Characterisitics
PNP Transistors
2SB1197 (2SB1197K)
-350
-300
-250
-200
-150
-100
-50
-0
-0
-1.2
Static Characteristic
-1mA
COMMON
EMITTER
T =25ć
a
-0.9mA
-0.8mA
-0.7mA
-0.6mA
-0.5mA
-0.4mA
-0.3mA
-0.2mA
I =-0.1mA
B
-2 -4 -6 -8 -10
COLLECTOR-EMITTER VOLTAGE V (V)
CE
-12
VBEsat —— IC
-1.0
-0.8 Ta =25ć
-0.6
-0.4
-0.2
-0.1
100
50
10
Ta =100ć
ȕ=10
-1 -10 -100
COLLECTOR CURRENT I (mA)
C
-800
Cob / Cib —— VCB / VEB
f=1MHz
I =0 / I =0
EC
Ta=25 oC
C
ib
- 1000
Ta =100 oC
hFE —— IC
Ta =25 oC
100
10
-1
- 0.6
- 0.5
- 0.4
- 0.3
- 0.2
- 0.1
0.0
-0.1
300
100
V = -3V
CE
-10 -100
COLLECTOR CURRENT I (mA)
C
- 800
VCEsat —— IC
ȕ=10
Ta=100ć
Ta=25ć
-1 -10 -100
COLLECTOR CURRENT I (mA)
C
fT —— IC
-800
1
-0.1
0.3
C
ob
-1
REVERSE VOLTAGE V (V)
-10
-20
Pc —— Ta
10
-2
V =-5V
CE
Ta=25 oC
-10
COLLECTOR CURRENT I (mA)
C
-100
0.2
0.1
0.0
0
25 50 75 100 125
AMBIENT TEMPERATURE T (ć)
a
150
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