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Datasheet 2SA733 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA733 | PNP Silicon Plastic-Encapsulate Transistor Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769
Features
• Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55OC to +150OC
2SA733
PNP Silicon Plastic |  Lunsure | transistor |
| 2 | 2SA733 | PNP EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA733
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier applicatioms.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Ra |  DC COMPONENTS | transistor |
| 3 | 2SA733 | PNP Transistors SMD Type
Features
Collector-Base Voltage: VCBO=-60V
TTrraannssiissttoorrss
PNP Transistors 2SA733
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
Unit: mm
+0.11.3 -0.1
0.55 0.4
+0.12.4 -0.1
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.10.97 -0.1
0.1 +0.05 -0.01
1.Base 2.Emitter 3.collector
0-0.1 +0.10.38
-0.1 |  Kexin | transistor |
| 4 | 2SA733 | PNP EPITAXIAL SILICON TRANSISTOR SHENZHEN MING YUE MICRO-ELECTRONICS CO., LTD
SEMICONDUCTOR TECHNICAL DATA
LOW FREQUENCY AMPLIFIER
* Complement to 2SC945 * Collector-Base Voltage VCBO=-60v
2SA733
PNP EPITAXIAL SILICON TRANSISTOR
Package: TO-92
ABSOLUTE MAXIMUM RATINGS at Tamb=250C
Characteristic
Symbol Rating
Collector-Base |  MING YUE | transistor |
| 5 | 2SA733 | SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors(PNP)
2SA733
FEATURE z Collector-Base Voltage z Complement to 2SC945
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO IC PD Tj Tstg
Emitter-Base Voltage Collector Current |  FASTSTAR | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY  Inchange Semiconductor transistor | |
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