DataSheet26.com

AO3420 PDF даташит

Спецификация AO3420 изготовлена ​​​​«Oucan Semi» и имеет функцию, называемую «20V N-Channel MOSFET».

Детали детали

Номер произв AO3420
Описание 20V N-Channel MOSFET
Производители Oucan Semi
логотип Oucan Semi логотип 

5 Pages
scroll

No Preview Available !

AO3420 Даташит, Описание, Даташиты
AO3420
20V N-Channel MOSFET
General Description
Product Summary
The AO3420 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX)
rating. This device is suitable for use as a uni-directional
or bi-directional load switch.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS=2.5V)
RDS(ON) (at VGS=1.8V)
20V
6A
< 24m
< 27m
< 42m
< 55m
SOT23
Top View
Bottom View
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
6
5
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev.2. 0: August 2013
Page 1 of 5









No Preview Available !

AO3420 Даташит, Описание, Даташиты
AO3420
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
ID=250µA, VGS=0V
VDS=20V, VGS=0V
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, ID=6A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
Forward Transconductance
VDS=5V, ID=6A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=10V, ID=6A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=10V, RL=1.7,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
Min
20
0.4
420
65
45
0.8
Typ Max Units
V
1
µA
5
±100 nA
0.75 1.1
V
16 24
m
23 35
18 27 m
23 42 m
31 55 m
25 S
0.7 1
V
2A
525 630
95 125
75 105
1.7 2.6
pF
pF
pF
12.5 nC
6 nC
1 nC
2 nC
3 ns
7.5 ns
20 ns
6 ns
14 ns
6 nC
Rev.2. 0: August 2013
Page 2 of 5









No Preview Available !

AO3420 Даташит, Описание, Даташиты
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
30
3.5V
4.5V
2.5V
20
VDS=5V
15
20
1.8V
10
VGS=3.5V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
60
55
50
45
40 VGS=1.8V
35
30 VGS=2.5V
25
20 VGS=4.5V
15 VGS=10V
10
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
125°C
5
25°C
0
0 0.5 1 1.5 2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2.5
1.8
VGS=4.5V
1.6
VGS=2.5V
ID=5A
ID=4A
1.4 17
VGS=51.8V
1.2 ID=2A2
1
VGS=10V10
ID=6A
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction18Temperature
(Note E)
45
ID=6A
40
35
30 125°C
25
20 25°C
15
0 2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.2. 0: August 2013
Page 3 of 5










Скачать PDF:

[ AO3420.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
AO3420N-CHANNEL MOSFETBLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
AO342020V N-Channel MOSFETOucan Semi
Oucan Semi
AO3420N-Channel MOSFETKexin
Kexin
AO3420N-Channel MOSFETAlpha & Omega Semiconductors
Alpha & Omega Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск