AO3401 PDF даташит
Спецификация AO3401 изготовлена «JinYu» и имеет функцию, называемую «30V P-Channel Enhancement Mode MOSFET». |
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Детали детали
Номер произв | AO3401 |
Описание | 30V P-Channel Enhancement Mode MOSFET |
Производители | JinYu |
логотип |
3 Pages
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30V P-Channel Enhancement Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω
RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω
RDS(ON), Vgs@-2.5V, Ids@-1.0A < 120mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
AO3401
D
SOT-23-3L
GS
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.65 2.95
1.50 1.70
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
1.90
1.00
0.10
0.40
0.85
Max.
REF.
1.30
0.20
-
1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±12
Continuous Drain Current
ID -4.2
Pulsed Drain Current
Maximum Power Dissipation
TA = 25oC
TA = 75oC
IDM
PD
-30
1.4
1
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJA
125
Unit
V
A
W
oC
oC/W
JinYu
semiconductor
www.htsemi.com
No Preview Available ! |
30V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
BVDSS
RDS(on)
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
gfs
VGS = 0V, ID = -250uA
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -4A
VGS = -2.5V, ID =-1A
VDS =VGS, ID = -250uA
VDS = -24V, VGS = 0V
VGS = ± 12V, VDS = 0V
VDS = -5V, ID = -5A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 20V, ID = 5.7A
VGS = 10V
VDD = 20V, RL=20Ω
ID = 1A, VGEN = 10V
RG = 6Ω
VDS = 8V, VGS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = 1.8A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Min.
-30
-0.7
7
AO3401
Typ. Miax. Unit
V
42.0 64.0
64.0 75.0 mΩ
80.0 120.0
-1 -1.3 V
-1
± 100
uA
nA
11 S
9.4
2 nC
3
6.3
3.2
ns
38.2
12
954
115 pF
77
-2.2 A
-1.0 V
JinYu
semiconductor
www.htsemi.com
No Preview Available ! |
30V P-Channel Enhancement Mode MOSFET
AO3401
JinYu
semiconductor
www.htsemi.com
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