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AO3400 PDF даташит

Спецификация AO3400 изготовлена ​​​​«HOTTECH» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв AO3400
Описание N-Channel MOSFET
Производители HOTTECH
логотип HOTTECH логотип 

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AO3400 Даташит, Описание, Даташиты
Plastic-Encapsulate Mosfets
FEATURES
The AO3400 is the N-Channel logic enhancement mode power
field effect transistor is produced using high cell density, DMOS
trench technology.
This high-density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage application
such as cellular phone and notebook computer power management
and other batter powered circuits where high side switching.
D
G
S
AO3400
N-Channel MOSFET
1.Gate
2.Source
3.Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
TA=25°C
T =70°C
Pulsed Drain Current C
Power Dissipation B
TA=25°C
TA=70°C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
TJ, TSTG
Maximum
30
20
5.8
4.9
30
1.4
1.0
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ Max
70 90
100 125
63 80
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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AO3400 Даташит, Описание, Даташиты
Plastic-Encapsulate Mosfets
AO3400
Electrical Characteristics (TA=25°C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-source On-Resistance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Symbol
Condition
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS
VDS=0V,VGS=±20V
IDSS
ID(on)
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=55
VDS 5V,VGS=4.5V
RDS(on)
VSD
VGS=10V,ID=5.8A
VGS=4.5V,ID=5.0A
VGS=2.5V,ID=4.0A
IS=1.0A,VGS=0V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=15V,VGS=4.5V
ID5.8A
VGS=10V, VDS=10V,
RL=2.7Ω,VGEN=4.5V
Min Typ Max Unit
30 V
0.7 1.4 V
±100
1
5
nA
uA
5.8 A
33 38
37 42 mΩ
47 55
0.7 1.1 V
9.7 12
1.6 nC
3.1
3.3 5
4.8 7
nS
26.3 40
4.1 6
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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AO3400 Даташит, Описание, Даташиты
AO3400 Typical Characteristics
Plastic-Encapsulate Mosfets
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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