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B772 PDF даташит

Спецификация B772 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «PNP MEDIUM POWER TRANSISTOR».

Детали детали

Номер произв B772
Описание PNP MEDIUM POWER TRANSISTOR
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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B772 Даташит, Описание, Даташиты
2SB772
PNP medium power transistor
Features
High current
Low saturation voltage
Complement to 2SD882
Applications
Voltage regulation
Relay driver
Generic switch
Audio power amplifier
DC-DC converter
Description
The device is a PNP transistor manufactured by
using planar Technology resulting in rugged high
performance devices. The complementary NPN
type is 2SD882.
1
2
3
SOT-32
(TO-126)
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SB772
Marking
B772
Package
SOT-32
Packing
Tube
October 2007
Rev 3
1/8
www.st.com
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B772 Даташит, Описание, Даташиты
1 Absolute maximum ratings
1 Absolute maximum ratings
Table 2. Absolute maximum rating
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PTOT
TSTG
TJ
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Collector-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5ms)
Base current
Base peak current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
RthJ-case Thermal resistance junction-case_max
2SB772
Value
-60
-30
-5
-3
-6
-1
-2
12.5
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
Value
10
Unit
°C/W
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B772 Даташит, Описание, Даташиты
2SB772
2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = -60 V
ICEO
Collector cut-off current
(IB = 0)
VCE = -30 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = -5 V
Collector-emitter breakdown
V(BR)CEO
(1)
voltage
IC = -10 mA
(IB = 0 )
Collector-base breakdown
V(BR)CBO voltage
(IE = 0 )
IC = -100 µA
Emitter-base breakdown
V(BR)EBO voltage
(IC = 0 )
IE = -100 µA
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = -1 A
IC = -2 A
IC = -3 A
VBE(sat) Base-emitter saturation
(1) voltage
IC = -2 A
IB = -50 mA
IB = -100 mA
IB = -150 mA
IB = -100 mA
-30
-60
-5
-10 µA
-100 µA
-10 µA
V
V
V
-0.4 V
-0.7 V
-1.1 V
-1.2 V
hFE DC current gain
IC = -100 mA
IC = -1 A
IC = -3 A
VCE = -2 V
VCE = -2 V
VCE = -2 V
100
80
30
300
fT Transition frequency
IC = -0.1
VCE = -10 V
100
MHz
1. Pulsed duration = 300 ms, duty cycle 1.5%.
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