BAV23 PDF даташит
Спецификация BAV23 изготовлена «CYStech Electronics» и имеет функцию, называемую «High voltage switching (double) diodes». |
|
Детали детали
Номер произв | BAV23 |
Описание | High voltage switching (double) diodes |
Производители | CYStech Electronics |
логотип |
7 Pages
No Preview Available ! |
CYStech Electronics Corp.
High voltage switching (double) diodes
BAV23/A/C/SN3
Spec. No. : C335N3
Issued Date : 2016.05.09
Revised Date :
Page No. : 1/7
Description
High voltage switching diodes encapsulated in a SOT-23 small plastic SMD package.
Single diodes and double diodes with different pinning are available.
Features
•Fast switching speed
•Low forward voltage drop
•Pb-free lead plating and halogen-free package
Mechanical Data
•Case : SOT-23, molded plastic
•Terminals : Solderable per MIL-STD-202 Method 208
•Weight : 0.008 grams(approx.)
Pinning
Pin
BAV23
1A
2 NC
3K
Description
BAV23A
BAV23C
K1 A1
K2 A2
A1,A2
K1,K2
BAV23S
A1
K2
K1,A1
Outline
SOT-23
3
12
(1) BAV23
(2)BAV23A
(3)BAV23C
(4)BAV23S
Diode configuration and symbol
BAV23/A/C/SN3
Marking:
Type
BAV23N3
BAV23AN3
BAV23CN3
BAV23SN3
Marking Code
JS
JS2
JS3
JS4
CYStek Product Specification
No Preview Available ! |
CYStech Electronics Corp.
Spec. No. : C335N3
Issued Date : 2016.05.09
Revised Date :
Page No. : 2/7
Absolute Maximum Ratings(Ta=25℃, unless otherwise specified)
Parameter
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-repetitive Peak Forward Surge Current
Repetitive Peak Forward Surge Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
@ tp=1μs
@ tp=100μs
@ tp=1s
Symbol
VRRM
VRWM
VR
IFM
IO
IFSM
IFRM
PD
RθJA
TJ
TSTG
Limits
250
400
200
9
3
1.7
625
250
500
-65~+150
-65~+150
unit
V
mA
mA
A
mA
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note)
Symbol
VBR
VF
Reverse Leakage Current
IR
Diode Capacitance
CD
Reverse Recovery Time
trr
Note: Pulse test, tp=300μs, duty cycle<2%.
Condition
IR=100μA
IF=100mA
IF=200mA
VR=250V
VR=250V, Tj=150°C
VR=0V, f=1MHz
IF=IR=30mA, RL=100Ω
measured at IR=3mA
Min.
250
-
-
-
-
-
-
Max.
-
1
1.25
100
100
5
50
Unit
V
V
V
nA
μA
pF
ns
Ordering Information
Device
BAV23N3-0-T1-G
BAV23AN3-0-T1-G
BAV23CN3-0-T1-G
BAV23SN3-0-T1-G
Package
Shipping
SOT-23
(Pb-free lead plating and 3000 pcs / Tape & Reel
halogen-free package)
Marking
JS
JS2
JS3
JS4
BAV23/A/C/SN3
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
CYStek Product Specification
No Preview Available ! |
CYStech Electronics Corp.
Spec. No. : C335N3
Issued Date : 2016.05.09
Revised Date :
Page No. : 3/7
Typical Characteristics
1000
100
10
Forward Current vs Forward Voltage
Pulse
width=300μs
150°C
125°C
100°C
Reverse Leakage Current vs Reverse Voltage
100
150°C
10 125℃
1
0.1
100℃
75℃
1
0.1
0
75°C 0.01
25°C
0.001
0.3 0.6 0.9 1.2 1.5
0
Forward Voltage---VF(V)
25℃
50 100 150 200
Reverse Voltage---VR(V)
250
Junction Capacitance vs Reverse Voltage
10
Tj=25℃, f=1.0MHz
Power Derating Curve
250
200
150
1
100
50
0.1
0.1
1 10
Reverse Voltage---VR(V)
0
100 0 25 50 75 100 125 150 175
Ambient Temperature ---TA(℃ )
BAV23/A/C/SN3
CYStek Product Specification
Скачать PDF:
[ BAV23.PDF Даташит ]
Номер в каталоге | Описание | Производители |
BAV20 | General purpose diodes | NXP Semiconductors |
BAV20 | FAST SWITCHING DIODE | Diodes Incorporated |
BAV20 | General Purpose Diodes | Fairchild Semiconductor |
BAV20 | High Voltage General Purpose Diode | Fairchild Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |